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Technique for etching monolayer and multilayer materials

  • US 9,153,453 B2
  • Filed: 02/10/2012
  • Issued: 10/06/2015
  • Est. Priority Date: 02/11/2011
  • Status: Active Grant
First Claim
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1. A process for etching a single layer of metal silicide or a metal silicide and silicon based multilayer material comprising,(a) obtaining a sample of the single layer of metal silicide or the metal silicide and silicon based multilayer material to be etched;

  • and(b) performing a one-step reactive ion etching process in combination with inductively coupled plasma etching on the sample using a gas mixture containing SF6 and O2, and using radio frequency power, wherein the SF6 is from about 89% to about 93% of the gas mixture, and the O2 is from about 11% to about 7% of the gas mixture, and wherein each of either (i) the etched single layer of metal silicide or (ii) the metal silicide and silicon based multilayer each has a growth thickness between 1 and 21 microns.

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