Electromigration immune through-substrate vias
First Claim
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1. A method of forming a semiconductor structure comprising:
- forming at least one trench in a first substrate;
filling said at least one trench with a conductive liner material and a conductive via segment material, wherein said conductive liner material constitutes a conductive liner located on sidewalls of said at least one trench and said conductive via segment material completely or partially fills each cavity in said at least one trench; and
performing at least once a set of processing steps including;
recessing a portion of a material that fills each upper portion of said at least one trench;
depositing another conductive liner material on exposed sidewalls of each of said at least one trench; and
depositing another conductive via segment material in each of said at least one trench,whereby at least one through-substrate via (TSV) structure is formed in said first substrate.
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Abstract
A through-substrate via (TSV) structure includes at least two electrically conductive via segments embedded in a substrate and separated from each other by an electrically conductive barrier layer therebetween. The length of each individual conductive via segment is typically equal to, or less than, the Blech length of the conductive material so that the stress-induced back flow force, generated by each conductive barrier layer, cancels the electromigration force in each conductive via segment. Consequently, the TSV structures are immune to electromigration, and provide reliable electrical connections among a chips stacked in 3 dimensions.
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Citations
9 Claims
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1. A method of forming a semiconductor structure comprising:
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forming at least one trench in a first substrate; filling said at least one trench with a conductive liner material and a conductive via segment material, wherein said conductive liner material constitutes a conductive liner located on sidewalls of said at least one trench and said conductive via segment material completely or partially fills each cavity in said at least one trench; and performing at least once a set of processing steps including; recessing a portion of a material that fills each upper portion of said at least one trench; depositing another conductive liner material on exposed sidewalls of each of said at least one trench; and depositing another conductive via segment material in each of said at least one trench, whereby at least one through-substrate via (TSV) structure is formed in said first substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification