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Semiconductor device and method of manufacturing the same

  • US 9,153,604 B2
  • Filed: 09/23/2014
  • Issued: 10/06/2015
  • Est. Priority Date: 03/02/1999
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor film;

    a gate insulating film adjacent to the semiconductor film; and

    a gate electrode adjacent to the semiconductor film with the gate insulating film interposed therebetween;

    a first insulating film over the gate electrode, the gate insulating film and the semiconductor film, the first insulating film comprising silicon, nitrogen and hydrogen;

    a first conductive layer over the first insulating film, the first conductive layer being electrically connected to one of a source region and a drain region of the semiconductor film;

    a second insulating film comprising a resin over the first conductive layer;

    a second conductive layer over the second insulating film, the second conductive layer having a light blocking ability;

    a third insulating film over the second conductive layer, the third insulating film comprising silicon and nitrogen; and

    a pixel electrode over the third insulating film,wherein the pixel electrode is electrically connected to the one of the source region and the drain region through at least the first conductive layer.

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