Oxide semiconductor
First Claim
1. An oxide semiconductor comprising:
- an aggregation of a plurality of InGaZnO4 crystals,wherein each of the plurality of InGaZnO4 crystals has a size larger than or equal to 1 nm and smaller than or equal to 3 nm, andwherein the plurality of InGaZnO4 crystals have no orientation.
1 Assignment
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Accused Products
Abstract
To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.
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Citations
4 Claims
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1. An oxide semiconductor comprising:
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an aggregation of a plurality of InGaZnO4 crystals, wherein each of the plurality of InGaZnO4 crystals has a size larger than or equal to 1 nm and smaller than or equal to 3 nm, and wherein the plurality of InGaZnO4 crystals have no orientation. - View Dependent Claims (2, 3)
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4. An oxide semiconductor comprising:
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indium, gallium and zinc, wherein a diffraction pattern having a plurality of spots circularly arranged is observed when an electron diffraction measurement is performed on the oxide semiconductor by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm, and wherein a diffraction pattern with no spot is observed when an electron diffraction measurement is performed on the oxide semiconductor by using an electron beam with a probe diameter larger than or equal to 300 nm.
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Specification