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Oxide semiconductor

  • US 9,153,650 B2
  • Filed: 03/13/2014
  • Issued: 10/06/2015
  • Est. Priority Date: 03/19/2013
  • Status: Active Grant
First Claim
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1. An oxide semiconductor comprising:

  • an aggregation of a plurality of InGaZnO4 crystals,wherein each of the plurality of InGaZnO4 crystals has a size larger than or equal to 1 nm and smaller than or equal to 3 nm, andwherein the plurality of InGaZnO4 crystals have no orientation.

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