Thin film transistor and method for manufacturing the same
First Claim
1. A method for manufacturing a thin film transistor, comprising:
- forming a gate electrode on a substrate;
forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor;
forming an oxygen providing layer on the active layer;
forming a gate dielectric between the gate electrode and the active layer;
forming source and drain electrodes coupled to the active layer;
forming a planarizing layer covering the gate electrode and the gate dielectric;
forming a hole in the planarizing layer exposing the active layer; and
performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen, thereby providing oxygen atoms of the atmosphere of oxygen to the active layer though the hole.
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Accused Products
Abstract
Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.
5 Citations
13 Claims
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1. A method for manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor; forming an oxygen providing layer on the active layer; forming a gate dielectric between the gate electrode and the active layer; forming source and drain electrodes coupled to the active layer; forming a planarizing layer covering the gate electrode and the gate dielectric; forming a hole in the planarizing layer exposing the active layer; and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen, thereby providing oxygen atoms of the atmosphere of oxygen to the active layer though the hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor; forming an oxygen providing layer on the active layer; forming a gate dielectric between the gate electrode and the active layer; forming source and drain electrodes coupled to the active layer; forming a planarizing layer covering the gate electrode and the gate dielectric; forming a hole exposing the active layer; and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen, wherein oxygen atoms from the atmosphere of oxygen are supplied into the active layer through the hole. - View Dependent Claims (11, 12)
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13. A method for manufacturing a thin film transistor, comprising:
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forming a gate electrode on a substrate; forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor; forming an oxygen providing layer on the active layer; forming a gate dielectric between the gate electrode and the active layer; forming source and drain electrodes coupled to the active layer; forming a planarizing layer covering the gate electrode and the gate dielectric; forming a hole exposing the active layer; and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen, thereby providing oxygen from the atmosphere of oxygen to the active layer through the hole, wherein the hole passes through the planarizing layer, the gate dielectric, and the oxygen providing layer to expose a part of an upper surface of the active layer.
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Specification