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Semiconductor device, power circuit, and manufacturing method of semiconductor device

  • US 9,153,702 B2
  • Filed: 05/08/2014
  • Issued: 10/06/2015
  • Est. Priority Date: 09/24/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive layer over a substrate;

    an oxide semiconductor layer over the first conductive layer;

    a second conductive layer over the oxide semiconductor layer, wherein the second conductive layer is not overlapped with the first conductive layer;

    an insulating layer over the oxide semiconductor layer and the second conductive layer; and

    a third conductive layer over the insulating layer, wherein the third conductive layer comprises at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer,wherein the first conductive layer serves as one of a source electrode and a drain electrode,wherein the second conductive layer serves as the other of the source electrode and the drain electrode, andwherein the third conductive layer serves as a gate electrode.

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