Semiconductor device, power circuit, and manufacturing method of semiconductor device
First Claim
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1. A semiconductor device comprising:
- a first conductive layer over a substrate;
an oxide semiconductor layer over the first conductive layer;
a second conductive layer over the oxide semiconductor layer, wherein the second conductive layer is not overlapped with the first conductive layer;
an insulating layer over the oxide semiconductor layer and the second conductive layer; and
a third conductive layer over the insulating layer, wherein the third conductive layer comprises at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer,wherein the first conductive layer serves as one of a source electrode and a drain electrode,wherein the second conductive layer serves as the other of the source electrode and the drain electrode, andwherein the third conductive layer serves as a gate electrode.
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Abstract
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a first conductive layer over a substrate; an oxide semiconductor layer over the first conductive layer; a second conductive layer over the oxide semiconductor layer, wherein the second conductive layer is not overlapped with the first conductive layer; an insulating layer over the oxide semiconductor layer and the second conductive layer; and a third conductive layer over the insulating layer, wherein the third conductive layer comprises at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer, wherein the first conductive layer serves as one of a source electrode and a drain electrode, wherein the second conductive layer serves as the other of the source electrode and the drain electrode, and wherein the third conductive layer serves as a gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first conductive layer over a substrate; forming an oxide semiconductor layer over the first conductive layer; forming a second conductive layer over the oxide semiconductor layer, wherein the second conductive layer is not overlapped with the first conductive layer; forming an insulating layer over the oxide semiconductor layer and the second conductive layer; and forming a third conductive layer over the insulating layer, wherein the third conductive layer comprises at least a first portion which is overlapped with neither the first conductive layer nor the second conductive layer, wherein the first conductive layer serves as one of a source electrode and a drain electrode, wherein the second conductive layer serves as the other of the source electrode and the drain electrode, and wherein the third conductive layer serves as a gate electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification