High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof
First Claim
1. A method for manufacturing a semiconductor device, the method comprising:
- forming a first nitride semiconductor layer on a substrate;
forming irregular pores in a surface of the first nitride semiconductor layer by etching the first nitride semiconductor layer using a process selected from the group consisting of reactive ion etching and dipping in a wet etching solution;
forming a second nitride semiconductor layer on the first nitride semiconductor layer so as to cover the pores, wherein lateral crystal growth of the second nitride semiconductor layer completely fills the pores; and
forming a semiconductor device structure on the second nitride semiconductor layer,wherein upper side surfaces of the pores in the first nitride semiconductor layer form a lateral crystal growth region for growth of the second nitride semiconductor layer, andwherein a portion of the second nitride semiconductor layer disposed in the pores is grown from the upper side surfaces of the pores.
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Abstract
Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.
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Citations
11 Claims
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1. A method for manufacturing a semiconductor device, the method comprising:
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forming a first nitride semiconductor layer on a substrate; forming irregular pores in a surface of the first nitride semiconductor layer by etching the first nitride semiconductor layer using a process selected from the group consisting of reactive ion etching and dipping in a wet etching solution; forming a second nitride semiconductor layer on the first nitride semiconductor layer so as to cover the pores, wherein lateral crystal growth of the second nitride semiconductor layer completely fills the pores; and forming a semiconductor device structure on the second nitride semiconductor layer, wherein upper side surfaces of the pores in the first nitride semiconductor layer form a lateral crystal growth region for growth of the second nitride semiconductor layer, and wherein a portion of the second nitride semiconductor layer disposed in the pores is grown from the upper side surfaces of the pores. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor device, the method comprising:
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forming a first nitride semiconductor layer on a substrate; forming irregular pores in a surface of the first nitride semiconductor layer by etching the first nitride semiconductor layer using a process selected from the group consisting of reactive ion etching and dipping in a wet etching solution; forming a second nitride semiconductor layer on the first nitride semiconductor layer so as to cover the pores, wherein lateral crystal growth of the second nitride semiconductor layer completely fills the pores; and forming a semiconductor device structure on the second nitride semiconductor layer, wherein forming the second nitride semiconductor layer comprises growing the second nitride semiconductor layer laterally outward from top surfaces of the first nitride semiconductor layer respectively disposed between the pores, and wherein a portion of the second nitride semiconductor layer disposed in the pores is grown from the upper side surfaces of the pores.
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Specification