Light-emitting element

• US 9,153,738 B2
• Filed: 05/21/2015
• Issued: 10/06/2015
• Est. Priority Date: 12/07/2012
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hon, Schang-Jing, Chen, Chao-Hsing, Ko, Tsun-Kai, Shen, Chien-Fu, Wang, Jia-Kuen, Chen, Hung-Che
• Primary Examiner(s): Dang, Trung Q
• Application Number:
  US14/718,242
• Publication Number:
  US 20150255676A1
• Time in Patent Office: 138 Days
• Field of Search: 257/98
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a plurality of extensions formed on the first semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein one of the plurality of extensions is formed beyond a projected area of the second conductive part and not covered by the first conductive part.

Claims

1. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a plurality of extensions formed on the first semiconductor layer; and

a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein one of the plurality of extensions is formed beyond a projected area of the second conductive part and not covered by the first conductive part.

2. The light-emitting element according to claim 1, wherein the extensions are spaced apart from each other.

3. The light-emitting element according to claim 1, wherein the first semiconductor layer is electrically connected to the first conductive part through the plurality of extensions.

4. The light-emitting element according to claim 1, further comprising a first protection layer formed on or above the light-emitting semiconductor stack, wherein the first protection layer defines a plurality of first through holes and a plurality of second through holes.

5. The light-emitting element according to claim 4, wherein the first conductive part covers the plurality of first through holes and the second conductive part covers the plurality of second through holes.

6. The light-emitting element according to claim 1, further comprising a transparent conductive electrode formed on or above the second semiconductor layer.

7. The light-emitting element according to claim 6, further comprising a second protection layer formed on or above a surface of the transparent conductive electrode.

8. The light-emitting element according to claim 7, further comprising a barrier layer formed on or above a surface of the transparent conductive electrode.

9. The light-emitting element according to claim 8, wherein the barrier layer comprises metal material.

10. The light-emitting element according to claim 8, further comprising a reflective layer formed between the barrier layer and the transparent conductive electrode.

11. A light-emitting element, comprising:

a light-emitting semiconductor stack comprising;

a first semiconductor layer;

a second semiconductor layer on the first semiconductor layer; and

a light-emitting layer between the first semiconductor layer and the second semiconductor layer;

a first protection layer formed on the light-emitting semiconductor stack;

an extension comprising metal material formed on the light-emitting semiconductor stack and covered by the first protection layer; and

a first conductive part and a second conductive part are formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part.

12. The light-emitting element according to claim 11, wherein the extension comprises an inclined sidewall.

13. The light-emitting element according to claim 11, further comprising a reflective layer formed on the one first extension.

14. The light-emitting element according to claim 11, further comprising a barrier layer formed on the one first extension.

15. The light-emitting element according to claim 14, wherein the barrier layer covers and surrounds the reflective layer.

16. The light-emitting element according to claim 11, wherein the first conductive part and the second conductive part comprise a distance there between, and the distance is at least 50 μ

m.

17. The light-emitting element according to claim 11, further comprising a first electrode between the light-emitting semiconductor stack and the first protection layer, and the first protection layer further comprises a first through hole at a position above the first electrode, wherein the first conductive part is electrically connected to the first electrode through the second through hole.

18. The light-emitting element according to claim 11, further comprising a second electrode between the light-emitting semiconductor stack and the first protection layer, and the first protection layer further comprises a second through hole at a position above the second electrode, wherein the second conductive part is electrically connected to the second electrode through the second through hole.

19. The light-emitting element according to claim 11, wherein a surface area of an upper surface of the first conductive part is equal to a surface area of an upper surface of the second conductive part.

20. The light-emitting element according to claim 11, wherein a height of the first conductive part is equal to a height of the second conductive part.