Double bulk acoustic resonator comprising aluminum scandium nitride
First Claim
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1. A method of forming a double bulk acoustic resonator (DBAR) structure, comprising;
- providing a substrate;
forming an air cavity in the substrate;
forming a first electrode on a substrate and over the air cavity;
forming a first piezoelectric layer on the first electrode;
forming a second electrode on the first piezoelectric layer;
forming a second piezoelectric layer on the second electrode; and
forming a third electrode on the second piezoelectric layer,wherein the first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.
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Abstract
A method of forming a double bulk acoustic resonator structure comprises forming a first electrode on a substrate, forming a first piezoelectric layer on the first electrode, forming a second electrode on the first piezoelectric layer, forming a second piezoelectric layer on the second electrode, and forming a third electrode on the second piezoelectric layer. The first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum.
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Citations
23 Claims
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1. A method of forming a double bulk acoustic resonator (DBAR) structure, comprising;
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providing a substrate; forming an air cavity in the substrate; forming a first electrode on a substrate and over the air cavity; forming a first piezoelectric layer on the first electrode; forming a second electrode on the first piezoelectric layer; forming a second piezoelectric layer on the second electrode; and forming a third electrode on the second piezoelectric layer, wherein the first and second piezoelectric layers are formed by a sputter deposition process using at least one sputter target comprising a combination of scandium and aluminum. - View Dependent Claims (2, 3, 4, 5, 6, 15)
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7. A double bulk acoustic resonator (DBAR) structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a first piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride; a second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode a id comprising aluminum scandium nitride; and a third electrode disposed over the second piezoelectric layer. - View Dependent Claims (8, 9)
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10. A ladder filter comprising a plurality of series resonators and a plurality of shunt resonators connected between an input port and an output port, at least one of the series or shunt resonators comprising a double bulk acoustic resonator (DBAR), comprising:
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a first electrode on a substrate; a first piezoelectric layer on the first electrode and comprising aluminum scandium nitride; a second electrode on the first piezoelectric layer; a second piezoelectric layer on the second electrode and comprising aluminum scandium nitride; and a third electrode on the second piezoelectric layer. - View Dependent Claims (11, 12, 13, 14)
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16. A double bulk acoustic resonator (DBAR) structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a first piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride, the first piezoelectric layer having a thickness in a range of approximately 1.0 μ
m to approximately 1.5 μ
m;second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode and comprising aluminum scandium nitride; and a third electrode disposed over the second piezoelectric layer. - View Dependent Claims (17, 18, 19, 20)
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21. A double bulk acoustic resonator (DBAR) structure, comprising:
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a first electrode disposed over a substrate; an air cavity located in the substrate and below the first electrode; a first piezoelectric layer disposed over the first electrode and comprising aluminum scandium nitride; second electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the second electrode and comprising aluminum scandium nitride; and a third electrode disposed over the second piezoelectric layer wherein the DBAR has a passband with a center frequency between approximately 700 MHz and approximately 900 MHz. - View Dependent Claims (22, 23)
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Specification