Body bias circuits and methods

• US 9,154,123 B1
• Filed: 08/19/2014
• Issued: 10/06/2015
• Est. Priority Date: 11/02/2012
• Status: Active Grant

• Current Assignee: Mie Fujitsu Semiconductor Ltd (United Microelectronics Corporation)
• Original Assignee: Mie Fujitsu Semiconductor Ltd (United Microelectronics Corporation)
• Inventors: Clark, Lawrence T., McGregor, Michael S., Kidd, David A., Kuo, Augustine, Rogenmoser, Robert
• Primary Examiner(s): Zweizig, Jeffrey
• Application Number:
  US14/463,399
• Time in Patent Office: 413 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/7851 with the body tied to the substrate
• CPC Class Codes: H03K 17/145 in field-effect transistor switches
• CPC Class Codes: H03K 19/00384 in field effect transistor circuits

Abstract

An integrated circuit can include a plurality of drive monitoring sections, each including at least one transistor under test (TUT) having a source coupled to a first power supply node, a gate coupled to receive a start indication, and a drain coupled to a monitor node, at least one monitor capacitor coupled to the monitor node, and a timing circuit configured to generate a monitor value corresponding to a rate at which the TUT can transfer current between the monitor node and the first power supply node; and a body bias circuit configured to apply a body bias voltage to at least one body region in which at least one transistor is formed; wherein the body bias voltage is generated in response to at least a plurality of the monitor values.

Claims

1. An integrated circuit, comprising:

an operational section comprising transistors formed in first and second body regions, and configured to provide predetermined functions;

at least one first body bias circuit coupled to drive first body regions to a first bias voltage in response to at least first bias values;

at least one second body bias circuit coupled to drive second body regions to a second bias voltage in response to at least second bias values;

a plurality of monitoring sections formed in a same substrate as the operational section, each configured to output a monitor value reflecting a different process variation effect on circuit performance, at least one monitoring section including a drive monitoring circuit having

at least one transistor under test (TUT) having a source coupled to a first power supply node, a gate coupled to receive a start indication, and a drain coupled to a monitor node,

at least one monitor capacitance coupled to the monitor node, and

a timing circuit configured to generate a monitor value corresponding to a rate at which the TUT can transfer current between the monitor node and the first power supply node; and

a combination logic section configured to generate the first and second bias values by weighting and combining the monitor values.

2. The integrated circuit of claim 1, wherein:

the operational section includes

the first body regions are doped to a p-type conductivity,

the second body regions are doped to an n-type conductivity, and

the transistors of the operational section include n-type insulated gate field effect transistors formed in the first body regions, and p-type insulated gate field effect transistors formed in the second body regions.

3. The integrated circuit of claim 1, wherein:

at least a portion of the transistors of the operational section are deeply depleted channel transistors having a substantially undoped channel formed over a screening region, the screening region being doped to a higher concentration than portions of the body region formed below the screening region.

4. The integrated circuit of claim 3, wherein the screening region has a dopant concentration range of about 5×

10¹⁸ to 1×

10²⁰ atoms/cm³.

5. The integrated circuit of claim 1, wherein:

each monitoring section further includes

a switch element coupled between the monitor node and a second power supply node,

a comparator having a first input coupled to the monitor node, a second input coupled to receive a reference voltage, and an output coupled to the timing circuit, and

the timing circuit is configured to start a count operation in response to disabling the switch element and enabling the TUT, and to stop the count operation in response to the output of the comparator.

6. The integrated circuit of claim 1, wherein:

each monitoring section further includes

a capacitor multiplexing circuit, coupled between the monitor node and a plurality of monitor capacitors, to selectively connect at least one of the monitor capacitors to the monitor node;

wherein

the monitor capacitors are formed from different structures of the integrated circuit.

7. The integrated circuit of claim 6, wherein:

the monitor capacitors include

at least one metal capacitor formed from metallization layers of the integrated circuit and an interlayer dielectric between the metallization layers, and

at least one transistor capacitor formed from at least one transistor of the integrated circuit.

8. The integrated circuit of claim 1, wherein:

each drive monitoring section further includes

a TUT multiplexing circuit, coupled between the monitor node and a plurality of TUTs, to selectively connect the drain of one TUT to the monitor node.

9. The integrated circuit of claim 8, wherein:

the plurality of TUTs include

at least one standard voltage transistor fabricated to operate in a first voltage range, and

at least one different voltage transistor fabricated to operate in a different voltage range than the standard voltage transistor.

10. An integrated circuit, comprising:

a plurality of drive monitoring sections, each including

at least one transistor under test (TUT) having a source coupled to a first power supply node, a gate coupled to receive a start indication, and a drain coupled to a monitor node,

at least one monitor capacitor coupled to the monitor node, and

a timing circuit configured to generate a monitor value corresponding to a rate at which the TUT can transfer current between the monitor node and the first power supply node; and

a body bias circuit configured to apply a body bias voltage to at least one body region in which at least one transistor is formed;

wherein

the body bias voltage is generated in response to at least a plurality of the monitor values.

11. The integrated circuit of claim 10, wherein:

the plurality of drive monitoring sections includes

at least one n-type drive monitoring circuit having a n-type conductivity TUT, and

at least one p-type drive monitoring circuit having a p-type conductivity TUT.

12. The integrated circuit of claim 10, wherein:

each drive monitoring section further includes

a switch element coupled between the monitor node and a second power supply node,

a comparator having a first input coupled to the monitor node, a second input coupled to receive a reference voltage, and an output coupled to the timing circuit, and

the timing circuit is configured to start a count operation in response to disabling the switch element and enabling the TUT, and to stop the count operation in response to the output of the comparator.

13. The integrated circuit of claim 10, further including:

a combination logic section coupled to receive the monitor values and configured to generate bias values by weighting and combining the monitor values; and

the body bias voltage varies according to at least one bias value.

14. The integrated circuit of claim 10, wherein:

the at least one body region is selected from;

a substrate of a first conductivity type;

a well of a second conductivity type formed in a substrate of a first conductivity type;

an active semiconductor region formed over an insulating layer that includes a semiconductor-on-insulator type transistor; and

a substrate region formed below a screening region doped to a higher conductivity type than the substrate region, the screening region being formed below a substantially undoped channel region of a transistor.

15. The integrated circuit of claim 10, wherein:

the at least one transistor comprises a deeply depleted channel transistor having a substantially undoped channel formed over highly doped screening region to provide a strong body coefficient.

16. The integrated circuit of claim 15, wherein the screening region has a dopant concentration range of about 5×

10¹⁸ to 1×

10²⁰ atoms/cm³.