RF identification device with near-field-coupled antenna

• US 9,154,188 B2
• Filed: 07/30/2008
• Issued: 10/06/2015
• Est. Priority Date: 07/30/2007
• Status: Expired due to Fees

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Finocchiaro, Alessandro, Girlando, Giovanni, Palmisano, Giuseppe, Ferla, Giuseppe, Pagani, Alberto
• Primary Examiner(s): NWUGO, OJIAKO K
• Application Number:
  US12/182,893
• Publication Number:
  US 20090033467A1
• Time in Patent Office: 2,624 Days
• Field of Search: 3405721-5729, 340 101- 106, 235/385
• US Class Current: 1/1
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2225/06531 Non-galvanic coupling, e.g. capacitive coupling
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H04B 5/00 Near-field transmission systems, e.g. inductive or capacitive transmission systems
• CPC Class Codes: H04B 5/26 using coils
• CPC Class Codes: H04B 5/72 : for local intradevice communication
• CPC Class Codes: H04B 5/79 : for data transfer in combination with power transfer

Abstract

An embodiment of a RF identification device is formed by a tag and by a reader. The tag is formed by a processing circuit and a first antenna, which has the function both of transmitting and of receiving data. The reader is formed by a control circuit and by a second antenna, which has the function both of transmitting and of receiving data. The processing circuit is formed by a resonance capacitor, a modulator, a rectifier circuit, a charge-pump circuit and a detection circuit. The antenna of the tag and the processing circuit are integrated in a single structure in completely monolithic form. The first antenna has terminals connected to the input of the rectifier circuit, the output of which is connected to the charge-pump circuit. The charge-pump circuit has an output connected to the detection circuit.

Claims

1. An RF identification device, comprising;

a capacitor;

a first antenna disposed on a single die and having turns that surround an area of the single die;

a processing circuit including a detection circuit, a modulator and a rectifier stage, said modulator being arranged between said first antenna and said rectifier stage, wherein said rectifier stage comprises a positive rectifier and a negative rectifier;

wherein the single die is in completely monolithic form such that the processing circuit and the capacitor are disposed in the surrounded area; and

wherein said processing circuit further comprises a booster stage including a first booster circuit and a second booster circuit, wherein an input of said first booster circuit is electrically coupled to an output of said positive rectifier and an input of said second booster circuit is electrically coupled to an output of said negative rectifier.

2. The RF identification device according to claim 1,

wherein said processing circuit further comprises a first filter capacitor and a second filter capacitor;

said first filter capacitor having a first terminal coupled to the output of the positive rectifier and a second terminal coupled to a first terminal of said second filter capacitor; and

said second filter capacitor having a second terminal coupled to the output of the negative rectifier.

3. The RF identification device according to claim 1, wherein said die comprises a substrate of semiconductor material overlaid by a dielectric layer, said first antenna being formed in a metallization layer formed inside said dielectric layer.

4. The RF identification device according to claim 3, wherein said first antenna has a structure chosen between planar and stacked.

5. The RF identification device according to claim 4,

wherein said dielectric layer comprises a plurality of insulating layers separated by a plurality of mutually alternated metallization layers, said first antenna being formed in a top metallization layer, and said metallization layers being coupled together and to said antenna through vias.

6. The RF identification device according to claim 3, wherein said dielectric layer comprises a ground shield of semiconductor material arranged in contact with said substrate.