Automatic word line leakage measurement circuitry
First Claim
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1. A memory device, comprising:
- a plurality of memory cells;
a plurality of word lines coupled to the plurality of memory cells; and
a leakage measurement circuit coupled to the plurality of word lines, the leakage measurement circuit operable to generate a reference current and to determine whether a leakage current on the one of the plurality of word lines is acceptable relative to the reference current, wherein the leakage measurement circuit comprises;
a current generation circuit to generate the reference current at one of a plurality of current values;
a leakage test circuit coupled to the current generation circuit and the plurality of word lines, the leakage test circuit operable to compare the leakage current on each of the plurality of word lines with the reference current;
a selection circuit coupled to the leakage test circuit and operable to generate a signal indicating whether the leakage current on at least one of the plurality of word lines is acceptable; and
a plurality of measurement enable circuits and a plurality of comparing circuits, and wherein;
each of the plurality of measurement enable circuits coupled to a respective one of the plurality of word lines and a respective one of the plurality of comparing circuits,each of the plurality of measurement enable circuits operable to set a word line voltage on the respective one of the plurality of word lines to a respective voltage level by coupling the respective one of the plurality of word lines to the respective voltage level responsive to a first control signal,each of the plurality of measurement enable circuits further operable to couple the respective one of the plurality of word lines to the respective one of the plurality of comparing circuits responsive to the first control signal,each of the plurality of measurement enable circuits further operable to decouple the respective one of the plurality of word lines from the respective voltage level responsive to a second control signal, andeach of the plurality of measurement enable circuits further operable to supply the reference current to the respective one of the plurality of word lines by coupling the respective one of the plurality of word lines to the current generation circuit responsive to the second control signal.
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Abstract
The present invention is a circuit and method for measuring leakage on the plurality of word lines in a memory device. In one embodiment, a memory device may include a leakage measurement circuit that is coupled to a plurality of word lines of the memory device. The leakage measurement circuit may be operable to generate a reference current and to determine whether a leakage current on one of the plurality of word lines is acceptable relative to the reference current. In another embodiment, a method may include determining whether leakage on one of a plurality of word lines of a memory device is allowable using a circuit in the memory device.
69 Citations
14 Claims
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1. A memory device, comprising:
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a plurality of memory cells; a plurality of word lines coupled to the plurality of memory cells; and a leakage measurement circuit coupled to the plurality of word lines, the leakage measurement circuit operable to generate a reference current and to determine whether a leakage current on the one of the plurality of word lines is acceptable relative to the reference current, wherein the leakage measurement circuit comprises; a current generation circuit to generate the reference current at one of a plurality of current values; a leakage test circuit coupled to the current generation circuit and the plurality of word lines, the leakage test circuit operable to compare the leakage current on each of the plurality of word lines with the reference current; a selection circuit coupled to the leakage test circuit and operable to generate a signal indicating whether the leakage current on at least one of the plurality of word lines is acceptable; and a plurality of measurement enable circuits and a plurality of comparing circuits, and wherein; each of the plurality of measurement enable circuits coupled to a respective one of the plurality of word lines and a respective one of the plurality of comparing circuits, each of the plurality of measurement enable circuits operable to set a word line voltage on the respective one of the plurality of word lines to a respective voltage level by coupling the respective one of the plurality of word lines to the respective voltage level responsive to a first control signal, each of the plurality of measurement enable circuits further operable to couple the respective one of the plurality of word lines to the respective one of the plurality of comparing circuits responsive to the first control signal, each of the plurality of measurement enable circuits further operable to decouple the respective one of the plurality of word lines from the respective voltage level responsive to a second control signal, and each of the plurality of measurement enable circuits further operable to supply the reference current to the respective one of the plurality of word lines by coupling the respective one of the plurality of word lines to the current generation circuit responsive to the second control signal. - View Dependent Claims (2, 3, 4, 6, 7)
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5. The memory device of 1 wherein the memory device comprises a flash memory device.
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8. A computer system, comprising:
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an input device; an output device; a processor coupled to the input device and the output device; and a memory device coupled to the processor and having a plurality of word lines, the memory device operable to generate a reference current in the memory device and to determine whether a leakage current on the one of the plurality of word lines is acceptable relative to the reference current, wherein the memory device comprises; a current generation circuit to generate the reference current at one of the plurality of current values; a leakage test circuit coupled to the current generation circuit and the plurality of word lines, the leakage test circuit operable to compare the leakage current on each of the plurality of word lines with the reference current; a selection circuit coupled to the leakage test circuit and operable to generate a signal indicating whether the leakage current on at least one of the plurality of word lines is acceptable; and a plurality of measurement enable circuits and a plurality of comparing circuits, wherein; each of the plurality of measurement enable circuits coupled to a respective one of the plurality of word lines and a respective one of the plurality of comparing circuits, each of the plurality of measurement enable circuits operable to set a word line voltage on the respective one of the plurality of word lines to a respective voltage level by coupling the respective one of the plurality of word lines to the respective voltage level responsive to a first control signal, each of the plurality of measurement enable circuits further operable to couple the respective one of the plurality of word lines to the respective one of the plurality of comparing circuits responsive to the first control signal, each of the plurality of measurement enable circuits further operable to decouple the respective one of the plurality of word lines from the respective voltage level responsive to a second control signal, and each of the plurality of measurement enable circuits further operable to supply the reference current to the respective one of the plurality of word lines by coupling the respective one of the plurality of word lines to the current generation circuit responsive to the second control signal. - View Dependent Claims (9, 10, 11, 13, 14)
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12. The computer system of 8 wherein the memory device comprises a flash memory device.
Specification