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Method of forming a germanium-containing FinFET

  • US 9,159,552 B2
  • Filed: 12/27/2013
  • Issued: 10/13/2015
  • Est. Priority Date: 12/27/2013
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming isolation regions in a semiconductor substrate;

    forming a first semiconductor strip between opposite portions of isolation regions;

    forming a second semiconductor strip overlying and contacting the first semiconductor strip;

    performing a first recessing to recess the isolation regions, wherein a portion of the second semiconductor strip over top surfaces of remaining portions of the isolation regions forms a semiconductor fin;

    performing a second recessing to recess the isolation regions to extend the semiconductor fin downwardly, with an inter-diffusion region of the first semiconductor strip and the second semiconductor strip being exposed after the second recessing; and

    etching the inter-diffusion region.

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