Architecture to improve cell size for compact array of split gate flash cell with buried common source structure

• US 9,159,735 B2
• Filed: 07/18/2013
• Issued: 10/13/2015
• Est. Priority Date: 07/18/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tsair, Yong-Shiuan, Liu, Po-Wei, Huang, Wen-Tuo, Hsu, Yu-Ling, Tsao, Tsun-Kai, Shen, Ming-Huei
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): HAGAN, CHRISTINE LAU
• Application Number:
  US13/945,002
• Publication Number:
  US 20150021679A1
• Time in Patent Office: 817 Days
• Field of Search: 257/320
• US Class Current: 1/1
• CPC Class Codes: H01L 29/42328 with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H01L 29/788 with floating gate H01L29/78391 takes precedence
• CPC Class Codes: H01L 29/7881 Programmable transistors with only two possible levels of programmation H01L29/7888 takes precedence
• CPC Class Codes: H01L 29/7883 charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
• CPC Class Codes: H01L 29/7885 Hot carrier injection from the channel
• CPC Class Codes: H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• CPC Class Codes: H10B 41/30 characterised by the memory core region

Abstract

Some embodiments of the present disclosure relates to an architecture to create split gate flash memory cell that has lower common source (CS) resistance and a reduced cell size by utilizing a buried conductive common source structure. A two-step etch process is carried out to create a recessed path between two split gate flash memory cells. A single ion implantation to form the common source also forms a conductive path beneath the STI region that connects two split gate flash memory cells and provide potential coupling during programming and erasing and thus electrically connect the common sources of memory cells along a direction that forms a CS line. The architecture contains no OD along the source line between the cells, thus eliminating the effects of CS rounding and CS resistance, resulting in a reduced space between cells in an array. Hence, this particular architecture reduces the resistance and the buried conductive path between several cells in an array suppresses the area over head.

Claims

1. A memory device comprising:

a first pair of split gate flash memory cells residing within a first active region, the first active region having an upper surface in a semiconductor body, wherein the first pair of split gate flash memory cells share a first shared erase gate having a dish shaped surface that extends below the upper surface of the first active region;

a first shared common source region disposed below the dish shaped surface of the first erase gate in the first active region;

a second pair of split gate flash memory cells residing within a second active region, the second active region having an upper surface in the semiconductor body, wherein the second pair of split gate flash memory cells share a second shared erase gate having a dish shaped surface that extends below the upper surface of the second active region;

a second shared common source region disposed below the dish shaped surface of the second erase gate in the second active region;

an isolation region disposed within a trench in the semiconductor body separating the first and second active regions; and

a buried doped conductive path disposed beneath the isolation region extending between the first and second shared common source regions, wherein the buried doped conductive path has an undulating shape, following an inner profile of the trench.

2. The memory device of claim 1, wherein the first shared common source region, the second shared common source region, and the buried doped conductive path comprise a single doped layer in the semiconductor body.

3. The memory device of claim 1, further comprising:

an oxide layer separating the first erase gate and the first shared common source region, wherein the oxide layer is disposed over a dish shaped etch profile on the first active region.

4. The memory device of claim 1, wherein the first and second active regions and the isolation region extend in a first direction on the semiconductor body, and a plurality of such first and second active regions and isolation regions reside together to form an array of split gate flash memory cells.

5. The memory device of claim 1, wherein the first and second active regions and the isolation region extend in a first direction on the semiconductor body and wherein the buried doped conductive path extends in a second direction that is transverse to the first direction and connects the common sources of the first and second active regions to form a source line.

6. The memory device of claim 1, wherein the first and second pairs of split gate flash memory cells each comprise:

a pair of stacked gate structures, each stacked gate structure comprising a control gate over a floating gate; and

a select gate on opposite sides of the pair of stacked gate structures.

7. A memory device disposed on a semiconductor substrate comprising:

a first pair of split gate flash memory cells residing within a first active region, having a first shared common source region disposed below a dish shaped surface in the first active region; and

a second pair of split gate flash memory cells residing within a second active region, having a second shared common source region disposed below a dish shaped surface in the second active region, wherein the second pair of split gate flash memory cells is isolated from the first pair of split gate flash memory cells by a shallow trench isolation region;

wherein the first shared common source region and the second shared common source region are connected by a buried conductive path which has an undulating shape and is disposed under the shallow trench isolation (STI) region.

8. The memory device of claim 7, wherein the first and second pairs of split gate flash memory cells each extend in a first direction, and wherein the buried conductive path is disposed in a semiconductor body and is formed after etching the shallow trench isolation region, and wherein the buried conductive path is oriented in a second direction which is transverse to the first direction.

9. The memory device of claim 7, wherein a source oxide layer is disposed over a dish shaped surface in each of the first and second active regions.

10. The memory device of claim 7, wherein the buried conductive path is a doped region of the semiconductor substrate.

11. The memory device of claim 7, wherein the first and second shared common source regions and the buried conductive path are continuous with one another.

12. The memory device of claim 7, wherein:

the first pair of split gate flash memory cells includes a first pair of floating gates, respectively, which are disposed over an upper surface of the first active region, and includes a first pair of control gates, respectively, which are disposed over the first pair of floating gates, respectively; and

the second pair of split gate flash memory cells includes a second pair of floating gates, respectively, which are disposed over an upper surface of the second active region, and includes a second pair of control gates, respectively, which are disposed over the second pair of floating gates, respectively.

13. A split gate flash memory device, comprising:

a first pair of split gate flash memory cells which are disposed over an upper surface of a semiconductor body, wherein the upper surface of the semiconductor body exhibits a first recessed region which is arranged between the first pair of split gate flash cells and which extends below the upper surface of the semiconductor body;

a first common source region which is disposed in the first recessed region of the semiconductor body below the upper surface of the semiconductor body and which is common to first pair of split gate flash memory cells;

an erase gate which is disposed over the first recessed region and which has a dish-shaped lower surface that extends below the upper surface of the semiconductor body;

a conformal dielectric layer disposed in the first recessed region of the semiconductor body and separating the first common source region from the erase gate;

a second pair of split gate flash memory cells spaced laterally apart from the first pair of split gate flash memory cells and a second recessed region arranged between the second pair of split gate flash cells;

a second common source region disposed in the second recessed region of the semiconductor body below the upper surface of the semiconductor body;

a conductive path disposed in the semiconductor body electrically connecting the first and second common source regions, the conductive path having an undulating shape along a direction which is perpendicular to an orientation of split gate flash memory cells of each pair; and

an isolation region disposed within a trench in the semiconductor body and separating active regions of the first and second pairs of split gate flash memory cells;

wherein the conductive path extends beneath the isolation region to couple the first and second common source regions to one another.

14. The memory device of claim 13, wherein the conformal dielectric layer comprises silicon dioxide.

15. The split gate flash memory device of claim 13, wherein the conductive path is a doped surface region of the semiconductor body.

16. The memory device of claim 15, wherein the first and second common source regions and the conductive path are continuous with one another.

17. The split gate flash memory device of claim 13, wherein the erase gate extends continuously between the first and second pairs of split gate flash memory cells.

18. The split gate memory device of claim 13, wherein:

the first pair of split gate flash memory cells includes a first pair of floating gates, respectively, which are disposed over the upper surface of a semiconductor body, and includes a first pair of control gates, respectively, which are disposed over the first pair of floating gates, respectively.

19. The split gate flash memory device of claim 18, further comprising:

a first pair of select gates disposed along respective outer sidewalls of the first pair of floating gates, respectively; and

a horizontal dielectric separating the first pair of select gates from the upper surface of the semiconductor body and a vertical dielectric separating the first pair of select gates from the first pair of floating gates, respectively.

20. The split gate memory device of claim 13, wherein:

the second pair of split gate flash memory cells includes a second pair of floating gates, respectively, which are disposed over the upper surface of a semiconductor body, and includes a second pair of control gates, respectively, which are disposed over the second pair of floating gates, respectively.