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Replacement gate process and device manufactured using the same

  • US 9,159,798 B2
  • Filed: 05/03/2013
  • Issued: 10/13/2015
  • Est. Priority Date: 05/03/2013
  • Status: Active Grant
First Claim
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1. A replacement gate process, comprising:

  • providing a substrate, and a dummy gate structure formed on the substrate, wherein the dummy gate structure comprises a dummy layer on the substrate, a hard mask layer on the dummy layer, spacers at two sides of the dummy layer and the hard mask layer, a contact etch stop layer (CESL) covering the substrate, the spacers and the hard mask layer, and an interlayer dielectric layer covering the CESL, wherein the spacers and the CESL are made of the same material;

    planarizing the interlayer dielectric (ILD) layer to expose a top surface of the CESL and form a patterned ILD layer, wherein the top surface of the CESL covering the hard mask layer is aligned with a top surface of the patterned ILD layer;

    dry etching the CESL for removing a top portion of the CESL by stopping at a top surface of the hard mask layer to expose the hard mask layer;

    removing the hard mask layer; and

    removing the dummy layer to form a trench.

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