Top drain LDMOS

• US 9,159,828 B2
• Filed: 03/30/2012
• Issued: 10/13/2015
• Est. Priority Date: 04/27/2011
• Status: Active Grant

• Current Assignee: Alpha & Omega Semiconductor, Ltd.
• Original Assignee: Alpha & Omega Semiconductor, Ltd.
• Inventors: Mallikarjunaswamy, Shekar, Chen, John, Hu, YongZhong
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): Cruz, Leslie Pilar
• Application Number:
  US13/436,308
• Publication Number:
  US 20120273879A1
• Time in Patent Office: 1,292 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/1083 with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
• CPC Class Codes: H01L 29/161 including two or more of the elements provided for in group H01L29/16 , e.g. alloys H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/4175 for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/66659 with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: H01L 29/66681 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor substrate. The TD-LDMOS includes a source electrode disposed on a bottom surface of the semiconductor substrate. The TD-LDMOS further includes a source region and a drain region disposed on two opposite sides of a planar gate disposed on a top surface of the semiconductor substrate wherein the source region is encompassed in a body region constituting a drift region as a lateral current channel between the source region and drain region under the planar gate. The TD-LDMOS further includes at least a trench filled with a conductive material and extending vertically from the body region near the top surface downwardly to electrically contact the source electrode disposed on the bottom surface of the semiconductor substrate.

Claims

1. A top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor substrate comprising_:

a source electrode disposed on a bottom surface of the semiconductor substrate;

a source region and a drain region disposed on two opposite sides of a planar gate disposed on a top surface of the semiconductor substrate with gate sidewalls covered by a gate insulation spacer laterally extending away from the planar gate wherein the source region is encompassed in a body region contacting a drift region as a lateral current channel between the source region and drain region under the planar gate;

at least a body-source interconnect trench opened into the semiconductor substrate vertically aligned with an edge of the gate insulation spacer wherein the trench is filled with a conductive material having a top surface below the top surface of the semiconductor substrate for exposing a sidewall of the source region underneath the gate insulation spacer and extending vertically from the body region near the top surface of the semiconductor substrate downwardly to electrically contact the source electrode disposed on the bottom surface of the semiconductor substrate; and

a gate shield metal layer covering over the gate insulation spacer and extending laterally over the sidewall surface of the source region underneath the gate insulation spacer and covering a top surface of the body-source interconnect trench.

2. The TD-LDMOS device of claim 1 wherein:

the semiconductor substrate comprising a P+ substrate supporting a P epitaxial layer for forming the source and drain regions of an N type conductivity near the top surface of the semiconductor substrate.

3. The TD-LDMOS device of claim 2 wherein:

the body-source interconnect trench is filled with the conductive material comprising a heavily doped P++ selective epitaxial growth (SEG) of silicon or a SEG of silicon-germanium (SiGe).

4. The TD-LDMOS device of claim 2 further comprising:

a P++ liner implant region disposed below the bottom of a bottom surface and surrounding the sidewalls of the body-source interconnect trench.

5. The TD-LDMOS device of claim 1 wherein:

the planar gate further comprises a stacked planar gate padded underneath by a gate oxide layer and covered by a gate cap oxide and further having the gate sidewalls surrounded by the gate insulation spacer.

6. The TD-LDMOS device of claim 5 further comprising:

the gate shield metal layer further covering over the gate cap oxide and the gate insulation spacer and laterally extends to the sidewall of the source region underneath the gate insulation spacer and further laterally extends to the top surface of the top surface of the body-source interconnect trench.

7. The TD-LDMOS device of claim 1 wherein:

the body-source interconnect trench is filled with the conductive material comprising a selective epitaxial growth (SEG) of silicon or a SEG of silicon-germanium (SiGe).

8. The TD-LDMOS device of claim 1 further comprising:

a heavily doped liner implant region disposed below a bottom surface of the body-source interconnect trench and surrounding sidewalls of the body-source interconnect trench.

9. The TD-LDMOS device of claim 1 wherein:

the body-source interconnect trench has a depth to width ratio ranging from 10 to 25.

10. The TD-LDMOS device of claim 1 wherein:

the TD-LDMOS device is laterally configured to have a closed cell layout along a horizontal direction.

11. The TD-LDMOS device of claim 1 wherein:

the semiconductor substrate further comprising a heavily doped bottom layer having an opposite conductivity type from the body region.

12. The TD-LDMOS device of claim 1 wherein:

the semiconductor substrate further comprising a lateral drift region implanted with dopant with a same conductivity type as a conductivity type of the source region disposed along a lateral direction next to and extends away from the body region for connecting to a top drain electrode.

13. The TD-LDMOS device of claim 1 wherein:

the TD-LDMOS comprises a P-channel device formed in the semiconductor substrate comprising an N+ Si substrate.

14. A semiconductor power device comprising:

a gate disposed on a top surface of a semiconductor substrate for controlling a current path between a source region and a drain region disposed near the top surface of the substrate;

a body-source interconnect trench filled with a conductive material comprising a heavily doped P++ selective epitaxial growth (SEG) of silicon-germanium (SiGe) and extends downwardly for shorting the source region to a source electrode disposed on a bottom surface of the substrate; and

wherein the heavily doped P++ selective epitaxial growth (SEG) of silicon-germanium (SiGe) having a top surface below the top surface of the semiconductor substrate for exposing a sidewall of the source region underneath the gate insulation spacer; and

a gate shield metal layer covering over a gate insulation spacer and extending laterally over a sidewall surface of the source region underneath the gate insulation spacer and covering over a top surface of the body-source interconnect trench.