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Semiconductor device

  • US 9,159,840 B2
  • Filed: 08/11/2014
  • Issued: 10/13/2015
  • Est. Priority Date: 09/22/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive film and a second conductive film over an insulating surface;

    an oxide semiconductor film over and in contact with the first conductive film and the second conductive film;

    a third conductive film over the oxide semiconductor film, the third conductive film being in contact with the first conductive film;

    a fourth conductive film over the oxide semiconductor film, the fourth conductive film being in contact with the second conductive film;

    an insulating film over the oxide semiconductor film, the third conductive film, and the fourth conductive film; and

    a fifth conductive film over the insulating film,wherein the fifth conductive film overlaps the first conductive film and the second conductive film, andwherein the fifth conductive film does not overlap the third conductive film and the fourth conductive film.

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