Hybrid film for protecting MTJ stacks of MRAM

• US 9,159,907 B2
• Filed: 08/04/2011
• Issued: 10/13/2015
• Est. Priority Date: 08/04/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tang, Bang-Tai, Tsai, Cheng-Yuan
• Primary Examiner(s): Parker, Kenneth
• Assistant Examiner(s): Lin, John
• Application Number:
  US13/198,165
• Publication Number:
  US 20130032908A1
• Time in Patent Office: 1,531 Days
• Field of Search: 438/3, 438/778, 438/791, 438/792, 257/295, 257/298, 257/421, 257/E27.104, 257/E29.164, 257/E29.167, 257/E29.323, 365/145, 365/158, 365/171, 365/173
• US Class Current: 1/1
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A method includes patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack, and forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack. The step of patterning and the step of forming the first dielectric cap layer are in-situ formed in a same vacuum environment. A second dielectric cap layer is formed over and contacting the first dielectric cap layer.

Claims

1. A method comprising:

patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack;

forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack, wherein the first dielectric cap layer is formed using radical shower chemical vapor deposition (RSCVD), wherein the step of patterning and the step of forming the first dielectric cap layer are in-situ formed in a same vacuum environment; and

forming a second dielectric cap layer over and contacting the first dielectric cap layer, wherein the second dielectric cap layer is formed using plasma enhanced chemical vapor deposition (PECVD), wherein the first dielectric cap layer and the second dielectric cap layer are formed of a same dielectric material, and a first density of the first dielectric cap layer is different from a second density of the second dielectric cap layer.

2. The method of claim 1, wherein the first density of the first dielectric cap layer is lower than the second density of the second dielectric cap layer.

3. The method of claim 2, wherein the first and the second dielectric cap layers are silicon nitride layers.

4. The method of claim 1, wherein a vacuum break occurs between the steps of forming the first and second dielectric cap layers.

5. The method of claim 1, wherein no vacuum break occurs between the steps of forming the first and the second dielectric cap layers.

6. The method of claim 1 further comprising:

forming a top metal over the MTJ stack, wherein the top metal is under the first and the second dielectric cap layers;

forming a dielectric layer over and contacting the second dielectric cap layer; and

etching the dielectric layer and the first and the second dielectric cap layers to expose the top metal.

7. A method comprising:

patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack;

forming a first silicon nitride layer over a top surface and on a sidewall of the MTJ stack using radical shower chemical vapor deposition (RSCVD), wherein the step of patterning and the step of forming the first silicon nitride layer are in-situ formed in a same vacuum environment, with no vacuum break occurring; and

forming a second silicon nitride layer over and contacting the first silicon nitride layer using plasma enhanced chemical vapor deposition (PECVD), wherein the second silicon nitride layer has a higher density than the first silicon nitride layer.

8. The method of claim 7, wherein a vacuum break occurs between the steps of forming the first and the second silicon nitride layers.

9. The method of claim 7, wherein the step of forming the first silicon nitride layer is performed without generating plasma, and wherein the step of forming the second silicon nitride layer is performed with plasma generated.

10. The method of claim 7 further comprising:

forming a top metal over the MTJ stack, wherein the top metal and the MTJ layers are patterned using a same mask, and wherein the top metal is under the first and the second silicon nitride layers;

forming an oxide layer over and contacting the second silicon nitride layer; and

etching the oxide layer and the first and the second silicon nitride layers to expose the top metal.

11. The method of claim 7, wherein the first silicon nitride layer contacts the sidewall of the MTJ stack.

12. The method of claim 7, wherein the MTJ stack comprises a pinning layer, a pinned layer adjoining the pinning layer, a tunnel layer adjoining the pinned layer, and a free layer adjoining the tunnel layer.

13. A method comprising:

patterning a plurality of magnetic tunnel junction (MTJ) layers to form a MTJ stack;

forming a first dielectric cap layer over a top surface and on a sidewall of the MTJ stack using radical shower chemical vapor deposition (RSCVD), wherein the patterning and the forming the first dielectric cap layer are in-situ formed in a same vacuum environment;

forming a second dielectric cap layer over and contacting the first dielectric cap layer using plasma enhanced chemical vapor deposition (PECVD);

forming a top metal over the MTJ stack, wherein the top metal and the MTJ layers are patterned using a same mask, and wherein the top metal is under the first and the second dielectric cap layers;

forming an oxide layer over and contacting the second dielectric cap layer; and

etching the oxide layer and the first and the second dielectric cap layers to expose the top metal.

14. The method of claim 13, wherein the second dielectric cap layer has a second density higher than a first density of the first dielectric cap layer, and wherein the first dielectric cap layer and the second dielectric cap layer are formed of a same dielectric material.

15. The method of claim 14, wherein a difference between the second density and the first density is greater than about 0.1 g/cm³.

16. The method of claim 13, wherein the first dielectric cap layer is in contact with sidewalls of the MTJ stack.

17. The method of claim 13, wherein the MTJ stack comprises a pinning layer, a pinned layer adjoining the pinning layer, a tunnel layer adjoining the pinned layer, and a free layer adjoining the tunnel layer.

18. The method of claim 13, wherein the forming the first dielectric cap layer and the forming the second dielectric layer comprise depositing a first silicon nitride layer and a second silicon nitride layer, respectively.