Electro-optical device and electronic apparatus

• US 9,164,336 B2
• Filed: 04/15/2014
• Issued: 10/20/2015
• Est. Priority Date: 04/23/2013
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kinoe, Yusuke
• Primary Examiner(s): Nguyen, Dung
• Assistant Examiner(s): DUONG, TAI V
• Application Number:
  US14/252,842
• Publication Number:
  US 20140313448A1
• Time in Patent Office: 553 Days
• Field of Search: 349/43, 349/46, 349/110, 349/139, 257/59, 257/72, 345/92
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133388 with constructional differences between the display region and the peripheral region
• CPC Class Codes: G02F 1/133509 Filters, e.g. light shielding masks
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line

Abstract

A liquid crystal device includes a first dummy pixel and a second dummy pixel adjacent to each other in an X direction, in which width of a first portion of a scanning line between a first transistor of the first dummy pixel and a second transistor of the second dummy pixel is larger than width of a second portion of the scanning line between the second transistor and a third transistor of a pixel.

Claims

1. An electro-optical device that includes a display region where a plurality of pixels are arranged in a first direction and a second direction intersecting with the first direction, a dummy pixel region including a plurality of dummy pixels that are arranged outside of the display region, and a circuit region that is positioned outside of the dummy pixel region and including a circuit that drives the plurality of pixels, the device comprising:

a first transistor that is positioned in a first dummy pixel, the first dummy pixel being positioned at a position closest to the circuit region;

a second transistor that is positioned in a second dummy pixel adjacent to the first dummy pixel on the opposite side to the circuit region in the first direction;

a third transistor that is positioned adjacent to the second transistor in the first direction; and

a gate wiring extended in the first direction and electrically connected with each of the first transistor, the second transistor and the third transistor,

wherein width in the second direction of a first portion of the gate wiring between the first transistor and the second transistor is larger than width in the second direction of a second portion of the gate wiring between the second transistor and the third transistor.

2. The electro-optical device according to claim 1, further comprising:

a first dummy pixel shielding film for shielding the first dummy pixel from light and a second dummy pixel shielding film for shielding the second dummy pixel from light that are provided in the same layer as the gate wiring,

wherein a slit whose width is less than 1 μ

m is formed between the gate wiring and the first dummy pixel shielding film and between the gate wiring and the second dummy pixel shielding film.

3. The electro-optical device according to claim 2,

wherein a distance between the slit and a first gate contact for electrically connecting a gate of the first transistor to the gate wiring is longer than a distance between the slit and a second gate contact for electrically connecting a gate of the second transistor to the gate wiring.

4. The electro-optical device according to claim 1,

wherein the gate wiring is formed using metal silicide.

5. The electro-optical device according to claim 1,

wherein respective gate electrodes of the first transistor, the second transistor, and the third transistor are formed using a conductive poly-silicon film.

6. An electronic apparatus comprising the electro-optical device according to claim 1.