Display device and electronic device including display device
First Claim
Patent Images
1. A display device comprising:
- a scan line;
a signal line;
a wiring; and
a pixel region comprising;
a first transistor;
a second transistor; and
a light-emitting element,wherein the second transistor comprises a first gate electrode, a second gate electrode and an oxide semiconductor layer, the first gate electrode being electrically connected to the scan line,wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a gate electrode of the first transistor,wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the signal line,wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the wiring,wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first electrode of the light-emitting element,wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element,wherein the oxide semiconductor layer includes a channel formation region,wherein when the second transistor is off state, a drain current of the second transistor per a channel width of 1 μ
m is less than or equal to 1×
10−
16 A/μ
m, andwherein the first gate electrode and the second gate electrode overlap with the channel formation region and sandwich the oxide semiconductor layer.
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Abstract
Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
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Citations
18 Claims
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1. A display device comprising:
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a scan line; a signal line; a wiring; and a pixel region comprising; a first transistor; a second transistor; and a light-emitting element, wherein the second transistor comprises a first gate electrode, a second gate electrode and an oxide semiconductor layer, the first gate electrode being electrically connected to the scan line, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a gate electrode of the first transistor, wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the signal line, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the wiring, wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first electrode of the light-emitting element, wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element, wherein the oxide semiconductor layer includes a channel formation region, wherein when the second transistor is off state, a drain current of the second transistor per a channel width of 1 μ
m is less than or equal to 1×
10−
16 A/μ
m, andwherein the first gate electrode and the second gate electrode overlap with the channel formation region and sandwich the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising:
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a scan line; a signal line; a wiring; and a pixel region comprising; a first transistor; a second transistor; and a light-emitting element, wherein the second transistor comprises a first gate electrode, a second gate electrode and a first oxide semiconductor layer, the first gate electrode being electrically connected to the scan line, wherein one of a source electrode and a drain electrode of the second transistor is electrically connected to a gate electrode of the first transistor, wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the signal line, wherein the first transistor comprises a second oxide semiconductor layer, wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to the wiring, wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a first electrode of the light-emitting element, wherein a first voltage applied to the wiring is greater than a second voltage applied to a second electrode of the light-emitting element, wherein the first oxide semiconductor layer includes a channel formation region, wherein, when the second transistor is off state, a drain current of the second transistor per a channel width of 1 μ
m is less than or equal to 1×
10−
16 A/μ
m, andwherein the first gate electrode and the second gate electrode overlap with the channel formation region and sandwich the first oxide semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Koyama, Jun, Miyake, Hiroyuki
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Primary Examiner(s)CERULLO, LILIANA P
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Application NumberUS14/540,326Publication NumberTime in Patent Office341 DaysField of SearchUS Class Current1/1CPC Class CodesG09G 2330/021 Power management, e.g. powe...G09G 3/2003 Display of colours specific...G09G 3/3208 organic, e.g. using organic...G09G 3/3233 with pixel circuitry contro...H01L 27/1225 with semiconductor material...H01L 29/78609 for preventing leakage curr...H01L 29/7869 having a semiconductor body...H01L 29/78693 the semiconducting oxide be...H01L 29/78696 characterised by the struct...H10K 59/1213 the pixel elements being TFTsH10K 59/131 Interconnections, e.g. wiri...
