Electronic devices having semiconductor memory units and method for fabricating the same
First Claim
1. An electronic device comprising a semiconductor memory unit which includes:
- a substrate;
a first interlayer insulating layer formed over the substrate;
first and second contact plugs passing through the first interlayer insulating layer and located over the substrate, the first and second contact plugs alternately arranged to have a regular intervals from each other;
a variable resistance element formed over the first interlayer insulating layer and coupled to the first contact plug;
a second interlayer insulating layer formed over an entire structure including the first interlayer insulating layer, the variable resistance element, the first contact plug and the second contact plug;
a third contact plug passing through the second interlayer insulating layer so as to be coupled to the variable resistance element;
a fourth contact plug passing through the second interlayer insulating layer so as to be electrically connected to the second contact plug; and
conductive lines coupled to the third contact plug and the fourth contact plug, respectively.
1 Assignment
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Accused Products
Abstract
The disclosed technology provides an electronic device and a fabrication method thereof. An electronic device according to an implementation of the disclosed technology may include: a first interlayer insulating layer formed over a substrate; first and second contact plugs passing through the first interlayer insulating layer to contact the substrate and alternately arranged to cross each other; a variable resistance element formed over the first interlayer insulating layer and coupled to the first contact plug; a second interlayer insulating layer formed over an entire structure including the first interlayer insulating layer; a third contact plug passing through the second interlayer insulating layer so as to be coupled to the variable resistance element, and a fourth contact plug passing through the second interlayer insulating layer so as to be contacted to the second contact plug; and conductive lines coupled to the third contact plug and the fourth contact plug, respectively.
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Citations
21 Claims
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1. An electronic device comprising a semiconductor memory unit which includes:
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a substrate; a first interlayer insulating layer formed over the substrate; first and second contact plugs passing through the first interlayer insulating layer and located over the substrate, the first and second contact plugs alternately arranged to have a regular intervals from each other; a variable resistance element formed over the first interlayer insulating layer and coupled to the first contact plug; a second interlayer insulating layer formed over an entire structure including the first interlayer insulating layer, the variable resistance element, the first contact plug and the second contact plug; a third contact plug passing through the second interlayer insulating layer so as to be coupled to the variable resistance element; a fourth contact plug passing through the second interlayer insulating layer so as to be electrically connected to the second contact plug; and conductive lines coupled to the third contact plug and the fourth contact plug, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An electronic device comprising a semiconductor memory unit which includes:
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a substrate; a first interlayer insulating layer formed over the substrate; first and second contact plugs passing through the first interlayer insulating layer and located over the substrate, the first and second contact plugs alternately arranged to have a regular intervals from each other; a variable resistance element formed over the first interlayer insulating layer and coupled to the first contact plug; a second interlayer insulating layer formed over an entire structure including the first interlayer insulating layer, the variable resistance element, the first contact plug and the second contact plug; a third contact plug passing through the second interlayer insulating layer so as to be coupled to the variable resistance element; a fourth contact plug passing through the second interlayer insulating layer so as to be coupled to the second contact plug; and conductive lines coupled to the third contact plug and the fourth contact plug, respectively, wherein the first and third contact plugs are arranged to overlap each other in a vertical direction. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for fabricating an electronic device, comprising:
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forming a first interlayer insulating layer over a substrate; simultaneously forming a first contact plug and a second contact plug, which pass through the first interlayer insulating layer to be coupled the substrate and are alternately arranged to have a regular intervals from each other; forming a variable resistance element over the first interlayer insulating layer which is coupled to the first contact plug; forming a second interlayer insulating layer over an entire structure including the first interlayer insulating layer, the variable resistance element, the first contact plug and the second contact plug; simultaneously forming a third contact plug and a fourth contact plug wherein the third contact plug passes through the second interlayer insulating layer so as to be coupled to the variable resistance element and the fourth contact plug passes through the second interlayer insulating layer to electrically connect to the second contact plug; and forming conductive lines over the second interlayer insulating layer, the conductive lines being coupled to the third contact plug and the fourth contact plug, respectively. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification