Method for singulating a component composite assembly

• US 9,165,816 B2
• Filed: 03/16/2012
• Issued: 10/20/2015
• Est. Priority Date: 03/31/2011
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Zull, Heribert, Perzlmaier, Korbinian, Ploessl, Andreas, Veit, Thomas, Kaempf, Mathias, Dennemarck, Jens, Boehm, Bernd
• Primary Examiner(s): PHAM, THANHHA S
• Application Number:
  US14/002,754
• Publication Number:
  US 20140080287A1
• Time in Patent Office: 1,313 Days
• Field of Search: 438/33, 438 25- 26, 438 66- 68, 438/73, 438113-114, 438/463, 438/464
• US Class Current: 1/1
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 21/7806 involving the separation of the active layers from a substrate
• CPC Class Codes: H01L 21/782 to produce devices, each consisting of a single circuit element H01L21/82 takes precedence
• CPC Class Codes: H01L 21/784 the substrate being a semiconductor body
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01S 5/0201 Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth

Abstract

A method relates to separating a component composite into a plurality of component regions, wherein the component composite is provided having a semiconductor layer sequence comprising a region for generating or for receiving electromagnetic radiation. The component composite is mounted on a rigid subcarrier. The component composite is separated into the plurality of component regions, wherein one semiconductor body is produced from the semiconductor layer sequence for each component region. The component regions are removed from the subcarrier.

Claims

1. A method for singulating a component composite assembly into a plurality of component regions comprising the following steps:

a) providing a component composite assembly having a semiconductor layer sequence, which has an active region provided for generating or for receiving electromagnetic radiation;

b) fixing the component composite assembly to a rigid auxiliary carrier;

c) singulating the component composite assembly into the plurality of component regions, wherein for each component region a respective semiconductor body emerges from the semiconductor layer sequence; and

d) removing the component regions from the rigid auxiliary carrier;

wherein, before step d), side faces of the component regions are formed by means of a plasma method.

2. The method according to claim 1, wherein the component composite assembly is fixed on the rigid auxiliary carrier by means of a metallic connection.

3. The method according to claim 2, wherein the component regions are removed from the rigid auxiliary carrier by means of a laser detachment method.

4. The method according to claim 2, wherein, before step d), side faces of the component regions are formed by means of a plasma method.

5. The method according to claim 2, wherein the component composite assembly is singulated by means of a laser separating method.

6. The method according to claim 1, wherein the component regions are removed from the rigid auxiliary carrier by means of a laser detachment method.

7. The method according to claim 6, wherein, before step d), side faces of the component regions are formed by means of a plasma method.

8. The method according to claim 1, wherein the component composite assembly is severed by means of the plasma method during singulation in step c).

9. The method according to claim 1, wherein the side faces of the component regions are formed by means of the plasma method after the component composite assembly has been singulated in step c).

10. The method according to claim 1, wherein the component composite assembly is singulated by means of a laser separating method.

11. The method according to claim 1, wherein the component regions are removed selectively from the rigid auxiliary carrier in step d).

12. The method according to claim 1, wherein a further auxiliary carrier is applied to the component regions before step d).

13. The method according to claim 12, wherein the further auxiliary carrier is a film.

14. The method according to claim 1, wherein before step b), a sacrificial layer is applied to the rigid auxiliary carrier.

15. The method according to claim 14, wherein the sacrificial layer is at least partly decomposed in step d).

16. The method according to claim 1, wherein the rigid auxiliary carrier contains sapphire.

17. The method according to claim 1, wherein

the component composite assembly is fixed on the rigid auxiliary carrier by means of a metallic connection;

before step d), side faces of the component regions are formed by means of a plasma method; and

the component regions are removed from the rigid auxiliary carrier by means of a laser detachment method.

18. A method for singulating a component composite assembly into a plurality of component regions comprising the following steps:

a) providing a component composite assembly having a semiconductor layer sequence on a carrier, which has an active region provided for generating or for receiving electromagnetic radiation;

b) fixing the component composite assembly including the carrier to a rigid auxiliary carrier;

c) singulating the component composite assembly into the plurality of component regions, wherein for each component region a respective semiconductor body emerges from the semiconductor layer sequence; and

d) removing the component regions from the rigid auxiliary carrier;

wherein the semiconductor layer sequence is arranged on the side facing away from the rigid auxiliary carrier and wherein in step c) the carrier is severed.

19. A method for singulating a component composite assembly into a plurality of component regions comprising the following steps:

a) providing a component composite assembly having a semiconductor layer sequence, which has an active region provided for generating or for receiving electromagnetic radiation;

b) fixing the component composite assembly to a rigid auxiliary carrier by means of a metallic connection;

c) singulating the component composite assembly into the plurality of component regions, wherein for each component region a respective semiconductor body emerges from the semiconductor layer sequence; and

d) removing the component regions from the rigid auxiliary carrier.