3D stacking semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A 3D stacking semiconductor device, comprising:
- N layers of stacking structures, each of the stacking structures including;
a conductive layer, wherein N is a positive number; and
an insulating layer, wherein the conductive layers and the insulating layers are interlaced and stacked; and
N pieces of conductive lines, wherein each conductive line is electrically connected to one contact point of each conductive layer;
wherein the contact points are arranged along a first direction to form a P stages stair structure having a single layer interval, the contact points are arranged along a second direction to form a Q stages stair structure having a P stages interval, N≦
P×
Q, the contact points are arranged in a matrix along the first direction and the second direction, the first direction and the second direction are parallel to a top surface of the conductive layer, the first direction is parallel to an edge of a stage in the Q stages stair structure, and an included angle between the first direction and the second direction is an acute angle.
1 Assignment
0 Petitions
Accused Products
Abstract
A 3D stacking semiconductor device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. N layers of stacking structures are provided. Each stacking structure includes a conductive layer and an insulating layer. A first photoresist layer is provided. The stacking structures are etched P-1 times by using the first photoresist layer as a mask. A second photoresist layer is provided. The stacking structures are etched Q-1 times by using the second photoresist layer as a mask. The first photoresist layer is trimmed along a first direction. The second photoresist layer is trimmed along a second direction. The first direction is different from the second direction. A plurality of contact points are arranged along the first and the second directions in a matrix. The included angle between the first direction and the second direction is an acute angle.
12 Citations
12 Claims
-
1. A 3D stacking semiconductor device, comprising:
-
N layers of stacking structures, each of the stacking structures including; a conductive layer, wherein N is a positive number; and an insulating layer, wherein the conductive layers and the insulating layers are interlaced and stacked; and N pieces of conductive lines, wherein each conductive line is electrically connected to one contact point of each conductive layer; wherein the contact points are arranged along a first direction to form a P stages stair structure having a single layer interval, the contact points are arranged along a second direction to form a Q stages stair structure having a P stages interval, N≦
P×
Q, the contact points are arranged in a matrix along the first direction and the second direction, the first direction and the second direction are parallel to a top surface of the conductive layer, the first direction is parallel to an edge of a stage in the Q stages stair structure, and an included angle between the first direction and the second direction is an acute angle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A 3D stacking semiconductor device, comprising:
-
N layers of stacking structures, each of the stacking structures including; a conductive layer; and an insulating layer, wherein the conductive layers and the insulating layers are interlaced and stacked; and N pieces of conductive lines, wherein each conductive line is electrically connected to one contact point of each conductive layer; wherein the contact points are arranged along a first direction to form a P stages stair structure having a single layer interval, the contact points are arranged along a second direction to form a Q stages stair structure having a P stages interval, the contact points are arranged in a matrix along the first direction and the second direction, the first direction and the second direction are parallel to a top surface of the conductive layer, the first direction is parallel to an edge of a stage in the Q stages stair structure, and an included angle between the first direction and the second direction is an acute angle, a P×
Q stages stair structure is formed by the P stages stair structure and the Q stages stair structure, and the P×
Q stages stair structure is arranged with P×
Q stages interval along the first direction to form a P×
Q×
R stages structure, N, P, Q and R are positive numbers, N≦
P×
Q×
R, and P, Q and R are factors of N, the P×
Q×
R stages structure includes a first P×
Q stages stair structure and a second P×
Q stages stair structure connecting to the first P×
Q stages stair structure, the first P×
Q stages stair structure and the second P×
Q stages stair structure are non-overlapping, the whole contact points of the first P×
Q stages stair structure are located higher than the whole contact points of the second P×
Q stages stair structure.
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeMacronix International Co., Ltd.
-
Original AssigneeMacronix International Co., Ltd.
-
InventorsChen, Shih-Hung
-
Primary Examiner(s)Toledo, Fernando L
-
Assistant Examiner(s)GRAY, AARON J
-
Application NumberUS13/736,104Publication NumberTime in Patent Office1,015 DaysField of Search257/324, 257/315, 257/319, 257/773, 257/E29.309, 257/E21.423, 257/E21.614US Class Current1/1CPC Class CodesH01L 21/76838 characterised by the format...H01L 2924/00012 Relevant to the scope of th...H01L 2924/0002 Not covered by any one of g...H10B 41/27 the channels comprising ver...H10B 41/50 characterised by the bounda...H10B 43/27 the channels comprising ver...H10B 43/50 characterised by the bounda...
