Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus

• US 9,165,874 B2
• Filed: 04/10/2013
• Issued: 10/20/2015
• Est. Priority Date: 04/11/2012
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Furuhata, Makoto
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): MAZUMDER, DIDARUL A
• Application Number:
  US13/860,107
• Publication Number:
  US 20130270707A1
• Time in Patent Office: 923 Days
• Field of Search: 257/622, 257/773, 257/774, 257/57, 257/56, 257/59, 257/72, 257347-354, 257754-756, 735/041.2, 735/041.4, 735/040.4
• US Class Current: 1/1
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 3/0086 Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 23/498 Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers shape of the substrate H01L23/13
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes a base substrate and first and second semiconductor wires which are arranged side by side on the base substrate, and the base substrate is provided with an opening (inter-wire grove, slit) in an extending direction of the first and second semiconductor wires between the first semiconductor wire and the second semiconductor wire.

Claims

1. A semiconductor device comprising:

a base substrate;

first and second semiconductor wires which are arranged side by side on the base substrate;

a drive mass portion configured to be oscillated by a drive portion;

wherein the base substrate is provided with an opening in an extending direction of the first and second semiconductor wires between the first semiconductor wire and the second semiconductor wire;

the drive portion includes fixed electrodes and movable electrodes;

the first semiconductor wire is connected to the fixed electrodes; and

the second semiconductor wire is connected to the movable electrodes.

2. The semiconductor device according to claim 1,

wherein a relationship of D≧

2 W is satisfied where D represents a depth of the opening and W represents a width between a center portion of a width of the first semiconductor wire and a center portion of a width of the second semiconductor wire.

3. The semiconductor device according to claim 1,

wherein a material of the first and second semiconductor wires is silicon.

4. The semiconductor device according to claim 1,

wherein the opening has a bottom.

5. An electronic apparatus comprising:

the semiconductor device according to claim 1 which is installed therein.

6. The semiconductor device according to claim 1, wherein a capacitance of the semiconductor device is defined as: