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Semiconductor device and method of manufacturing same

  • US 9,165,987 B2
  • Filed: 04/06/2015
  • Issued: 10/20/2015
  • Est. Priority Date: 04/24/2002
  • Status: Active Grant
First Claim
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1. A display device comprising:

  • a single crystal semiconductor substrate;

    a pixel portion comprising a light emitting element and a transistor electrically connected to the light emitting element;

    a substrate facing the single crystal semiconductor substrate with the light emitting element interposed therebetween; and

    a wiring over the single crystal semiconductor substrate,wherein the light emitting element comprising a first electrode, an EL layer over the first electrode and a second electrode over the EL layer,wherein the EL layer is in contact with the first electrode in a light emitting region of the light emitting element,wherein a thickness of the first electrode in a region except the light emitting region is larger than a thickness of the first electrode in the light emitting region,wherein the transistor comprises a channel formation region in the single crystal semiconductor substrate,wherein the wiring is electrically connected to the pixel portion, andwherein the EL layer is capable of emitting white light.

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