Semiconductor device and method of manufacturing same
First Claim
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1. A display device comprising:
- a single crystal semiconductor substrate;
a pixel portion comprising a light emitting element and a transistor electrically connected to the light emitting element;
a substrate facing the single crystal semiconductor substrate with the light emitting element interposed therebetween; and
a wiring over the single crystal semiconductor substrate,wherein the light emitting element comprising a first electrode, an EL layer over the first electrode and a second electrode over the EL layer,wherein the EL layer is in contact with the first electrode in a light emitting region of the light emitting element,wherein a thickness of the first electrode in a region except the light emitting region is larger than a thickness of the first electrode in the light emitting region,wherein the transistor comprises a channel formation region in the single crystal semiconductor substrate,wherein the wiring is electrically connected to the pixel portion, andwherein the EL layer is capable of emitting white light.
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Abstract
A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.
167 Citations
21 Claims
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1. A display device comprising:
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a single crystal semiconductor substrate; a pixel portion comprising a light emitting element and a transistor electrically connected to the light emitting element; a substrate facing the single crystal semiconductor substrate with the light emitting element interposed therebetween; and a wiring over the single crystal semiconductor substrate, wherein the light emitting element comprising a first electrode, an EL layer over the first electrode and a second electrode over the EL layer, wherein the EL layer is in contact with the first electrode in a light emitting region of the light emitting element, wherein a thickness of the first electrode in a region except the light emitting region is larger than a thickness of the first electrode in the light emitting region, wherein the transistor comprises a channel formation region in the single crystal semiconductor substrate, wherein the wiring is electrically connected to the pixel portion, and wherein the EL layer is capable of emitting white light. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A display device comprising:
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a single crystal semiconductor substrate; a pixel portion comprising a light emitting element and a transistor electrically connected to the light emitting element; a substrate facing the single crystal semiconductor substrate with the light emitting element interposed therebetween; and a wiring over the single crystal semiconductor substrate, wherein the light emitting element comprising a first electrode, an EL layer over the first electrode and a second electrode over the EL layer, wherein the first electrode comprises a layer containing aluminum, wherein the first electrode has a depression portion in which the EL layer is in contact with the layer containing aluminum, wherein the transistor comprises a channel formation region in the single crystal semiconductor substrate, wherein the wiring is electrically connected to the pixel portion, and wherein the EL layer is capable of emitting white light. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising:
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a single crystal semiconductor substrate; a pixel portion comprising a light emitting element and a first transistor electrically connected to the light emitting element; a driver circuit comprising a second transistor, the driver circuit electrically connected to the pixel portion; a substrate facing the single crystal semiconductor substrate with the light emitting element interposed therebetween; and a wiring over the single crystal semiconductor substrate, wherein the light emitting element comprising a first electrode, an EL layer over the first electrode and a second electrode over the EL layer, wherein the EL layer is in contact with the first electrode in a light emitting region of the light emitting element, wherein a thickness of the first electrode in a region except the light emitting region is larger than a thickness of the first electrode in the light emitting region, wherein each of the first transistor and the second transistor comprises a channel formation region in the single crystal semiconductor substrate, wherein the wiring is electrically connected to the pixel portion and the driver circuit, and wherein the EL layer is capable of emitting white light. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification