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Semiconductor device and method for manufacturing the same

  • US 9,166,021 B2
  • Filed: 10/07/2013
  • Issued: 10/20/2015
  • Est. Priority Date: 10/17/2012
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide stack over a substrate;

    forming a first insulating layer comprising oxygen over the oxide stack; and

    forming a gate electrode over the first insulating layer,wherein the oxide stack comprises;

    a first oxide layer comprising indium over the substrate;

    an oxide semiconductor layer comprising indium over the first oxide layer; and

    a second oxide layer comprising indium over the oxide semiconductor layer,wherein the first insulating layer is formed under a pressure higher than or equal to 100 Pa and lower than or equal to 300 Pa.

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