IGBT with reduced feedback capacitance

• US 9,166,027 B2
• Filed: 09/30/2013
• Issued: 10/20/2015
• Est. Priority Date: 09/30/2013
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Sandow, Christian Philipp, Schulze, Hans-Joachim, Laven, Johannes Georg, Niedernostheide, Franz-Josef, Pfirsch, Frank, Felsl, Hans-Peter
• Primary Examiner(s): Swanson, Walter H
• Application Number:
  US14/041,094
• Publication Number:
  US 20150091053A1
• Time in Patent Office: 750 Days
• Field of Search: 257/139
• US Class Current: 1/1
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0834 Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/0847 of field-effect transistors with insulated gate H01L29/0653 takes precedence; with a passive supplementary region between source or drain and substrate related to punch-through, capacity or isolation phenomena H01L29/1079; with LDD or DDD structure H01L29/7833; for thin film transistors H01L29/78618
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.

Claims

1. An IGBT comprising at least one first type transistor cell, comprising:

a base region, a first emitter region, a body region, and a second emitter region, wherein the body region is arranged between the first emitter region and the base region, and wherein the base region is arranged between the body region and the second emitter region;

a gate electrode adjacent the body region, and dielectrically insulated from the body region by a gate dielectric; and

a base electrode adjacent the base region, and dielectrically insulated from the base region by a base electrode dielectric,

wherein the base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section, and wherein a doping concentration of the first base region section is higher than a doping concentration of the second base region section,

the IGBT further comprising;

at least one second type transistor cell comprising a first base region section with a lower doping concentration than the first base region section of the first type transistor cell.

2. The IGBT of claim 1, wherein the doping concentration of the first base region section of the at least one first type transistor cell is between 1E14 cm⁻

3 and 1E17 cm<sup>−

3</sup>, and wherein the doping concentration of the second base region section of the at least one first type transistor cell is between 1E13 cm<sup>−

3</sup> and 1E16 cm<sup>−

3</sup>.

3. The IGBT of claim 1, wherein the doping concentration of the first base region section of the at least one first type transistor cell is between 5E15 cm⁻

3 and 5E16 cm<sup>−

3</sup>.

4. The IGBT of claim 1, wherein from the base region both the first base region section of the at least one first type transistor cell and the second base region section of the at least one first type transistor cell adjoin the body region.

5. The IGBT of claim 4, wherein a ratio between a thickness of the base electrode dielectric and a thickness of the gate dielectric is at least 1.2.

6. The IGBT of claim 1, wherein from the base region only the first base region section of the at least one first type transistor cell adjoins the body region.

7. The IGBT of claim 1, wherein the base electrode dielectric is thicker than the gate dielectric.

8. The IGBT of claim 1, wherein the gate electrode and the base electrode are arranged in a common trench of a semiconductor body.

9. The IGBT of claim 1, wherein an overlap of the base electrode with the base region is at least 0.5 micrometers.

10. The IGBT of claim 1, wherein the base electrode is electrically connected to the gate electrode.

11. The IGBT of claim 1, wherein the base electrode is floating.

12. The IGBT of claim 1, wherein the base electrode is electrically connected to an electrode connected to a source region of the first type transistor cell.

13. The IGBT of claim 1, further comprising:

a field stop region arranged between the base region and the second emitter region, the field stop region having a higher doping concentration than the base region.

14. The IGBT of claim 1, wherein the gate electrode is arranged in a trench of a semiconductor body, wherein the body region is adjacent one side of the trench, and wherein the gate electrode is insulated from a semiconductor region adjacent a second side of the trench by an insulation layer.

15. The IGBT of claim 14, wherein the semiconductor region adjacent the second side of the trench has a doping type that is complementary to a doping type of the base region.

16. The IGBT of claim 14, wherein the insulation layer is thicker than the gate dielectric.

17. The IGBT of claim 1, wherein the doping concentration of the first base region section of the second type transistor cell substantially corresponds to the doping concentration of the second base region section of the at least one first type transistor cell.

18. The IGBT of claim 1, further comprising:

a plurality of second type transistor cells, wherein the second type transistor cells have different doping concentrations of first drift region sections.

19. The IGBT of claim 18, wherein the plurality of second type transistor cells is arranged between a cell array with a plurality of first type transistor cells, and between an edge termination structure.

20. The IGBT of claim 1, wherein the at least one first type transistor cell and the second type transistor cell are connected in parallel.

21. The IGBT of claim 1, further comprising:

a third type transistor cell,

wherein at least one of;

a base electrode dielectric of the third type transistor cell is thinner than the base electrode dielectric of the at least one first type transistor cell; and

a first base region section of the third type transistor cell has a higher doping concentration than the first base region section of the at least one first type transistor cell.

22. The IGBT of claim 21, wherein the at least one first type transistor cell and the second type transistor cell are connected in parallel.

23. The IGBT of claim 1, further comprising:

a third emitter region of a doping type complementary to a doping type of the second emitter region and electrically coupled in parallel with the second emitter region.

24. The IGBT of claim 23, further comprising:

an electrode electrically connected to the second emitter region and the third emitter region.

25. The IGBT of claim 1, wherein the first emitter region and the base region are n-type semiconductor regions, and wherein the body region and the second emitter region are p-type semiconductor regions.

26. An IGBT comprising at least one first type transistor cell, comprising:

a base region, a first emitter region, a body region, a second emitter region, and a third emitter region of a doping type complementary to a doping type of the second emitter region and electrically coupled in parallel with the second emitter region, wherein the body region is arranged between the first emitter region and the base region, and wherein the base region is arranged between the body region and the second emitter region;

a gate electrode adjacent the body region, and dielectrically insulated from the body region by a gate dielectric; and

a base electrode adjacent the base region, and dielectrically insulated from the base region by a base electrode dielectric,

wherein the base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section, and wherein a doping concentration of the first base region section is higher than a doping concentration of the second base region section.

27. The IGBT of claim 26, wherein the first emitter region and the base region are n-type semiconductor regions, and wherein the body region and the second emitter region are p-type semiconductor regions.