Magnetic random access memory with multiple free layers

• US 9,166,143 B1
• Filed: 06/13/2014
• Issued: 10/20/2015
• Est. Priority Date: 06/13/2014
• Status: Active Grant

• Current Assignee: Avalanche Technology Incorporated
• Original Assignee: Avalanche Technology Incorporated
• Inventors: Gan, Huadong, Wang, Xiaobin, Zhou, Yuchen, Huai, Yiming
• Primary Examiner(s): MENZ, DOUGLAS M
• Application Number:
  US14/304,775
• Time in Patent Office: 494 Days
• Field of Search: 257/421
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

The present invention is directed to a magnetic random access memory element comprising a first magnetic reference layer, a first insulating tunnel junction layer, a first magnetic free layer, a first coupling layer, a second magnetic free layer, a second coupling layer, a third magnetic free layer, a second insulating tunnel junction layer, and a second magnetic reference layer formed in sequence. The first and second magnetic reference layers have respectively a first and second fixed magnetization directions that are substantially perpendicular to respective layer planes and are substantially opposite to each other. The first, second, and third magnetic free layers have respectively a first, second, and third variable magnetization directions that are substantially perpendicular to respective layer planes. The second variable magnetization direction may be parallel or anti-parallel to the first and third variable magnetization directions.

Claims

1. A magnetic random access memory element comprising a first magnetic reference layer, a first insulating tunnel junction layer, a first magnetic free layer, a first coupling layer, a second magnetic free layer, a second coupling layer, a third magnetic free layer, a second insulating tunnel junction layer, and a second magnetic reference layer formed in sequence, wherein said first and second magnetic reference layers have respectively a first and second fixed magnetization directions that are substantially perpendicular to respective layer planes and are substantially opposite to each other, said first, second, and third magnetic free layers have respectively a first, second, and third variable magnetization directions that are substantially perpendicular to respective layer planes.

2. The magnetic random access memory element of claim 1, wherein said first and third variable magnetization directions are substantially the same.

3. The magnetic random access memory element of claim 2, wherein said first and third variable magnetization directions are substantially opposite to said second variable magnetization direction.

4. The magnetic random access memory element of claim 3, wherein one or both of said first and second coupling layers are made of ruthenium.

5. The magnetic random access memory element of claim 2, wherein said first, second, and third variable magnetization directions are substantially the same.

6. The magnetic random access memory element of claim 5, wherein one or both of said first and second coupling layers are made of tantalum.

7. The magnetic random access memory element of claim 1, further comprising a seed layer underlying said first magnetic reference layer.

8. The magnetic random access memory element of claim 1, further comprising a cap layer overlying said second magnetic reference layer.

9. The magnetic random access memory element of claim 1, wherein one or both of said first and second insulating tunnel junction layers are made of magnesium oxide.

10. The magnetic random access memory element of claim 1, wherein one or more of said first magnetic reference layer, said second magnetic reference layer, said first magnetic free layer, said second magnetic free layer, and said third magnetic free layer have a structure comprising at least two magnetic sublayers.

11. The magnetic random access memory element of claim 10, wherein each of said first magnetic reference layer, said second magnetic reference layer, said first magnetic free layer, and said third magnetic free layer includes a CoFeB sublayer formed adjacent to said first or second insulating tunnel junction layer.

12. The magnetic random access memory element of claim 10, wherein each of said first, second, and third magnetic free layers includes at least one CoFe or Co sublayer formed adjacent to said first or second coupling layer.

13. The magnetic random access memory element of claim 10, wherein one or more of said first magnetic reference layer, said second magnetic reference layer, and said second magnetic free layer include a magnetic sublayer formed by interleaving layers of a first material with layers of a second material with at least one of said first and second materials being magnetic.

14. The magnetic random access memory element of claim 13, wherein said first material is cobalt and said second material is platinum, palladium, nickel, or any combination thereof.