Laser devices using a semipolar plane
First Claim
Patent Images
1. A display apparatus comprising:
- a housing having an aperture;
an input interface for receiving one or more frames of images;
an optical device comprising;
a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;
an n-type region overlying the semipolar surface;
a separate confinement heterostructure (SCH) region overlying the semipolar surface;
an active region comprising at least one light emitting active layer region overlying the n-type region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; and
a p-type region overlying the active region;
wherein the active region is configured with the semipolar surface to emit electromagnetic radiation with a wavelength between 400 nm and 500 nm or between 500 nm and 660 nm; and
a wavelength conversion material coupled to the optical device;
a power source electrically coupled to the optical device.
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Abstract
An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
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Citations
20 Claims
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1. A display apparatus comprising:
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a housing having an aperture; an input interface for receiving one or more frames of images; an optical device comprising; a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type region overlying the semipolar surface; a separate confinement heterostructure (SCH) region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anda p-type region overlying the active region; wherein the active region is configured with the semipolar surface to emit electromagnetic radiation with a wavelength between 400 nm and 500 nm or between 500 nm and 660 nm; and a wavelength conversion material coupled to the optical device; a power source electrically coupled to the optical device. - View Dependent Claims (2, 3, 4, 5)
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6. A display apparatus comprising:
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a housing having an aperture; an input interface for receiving one or more frames of images; an optical device comprising; a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type region overlying the semipolar surface; a superlattice region overlying the semipolar surface, the superlattice region being characterized by 20 to 150 periods of alternating GaN and InGaN layers, alternating AlGaN and InAlGaN layers, alternating AlGaN and GaN layers, or alternating GaN and InAlAGaN layers, each of the alternating layers in the superlattice region having a thickness ranging from 0.5 nm to 20 nm; an active region comprising at least one light emitting active layer region overlying the superlattice region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anda p-type region overlying the active region; wherein the active region is configured to emit electromagnetic radiation with a wavelength between 400 nm and 500 nm or between 500 nm and 660 nm; and a wavelength conversion material coupled to the optical device; a power source electrically coupled to the optical device. - View Dependent Claims (7, 8)
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9. A display apparatus comprising:
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a housing having an aperture; an input interface for receiving one or more frames of images; a laser device comprising; a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anda p-type cladding region overlying the active region; a conductive oxide overlying the p-type cladding region; a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first etched facet provided on the first end of the laser stripe region; and a second etched facet provided on the second end of the laser stripe region; a power source electrically coupled to the laser device;
wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm. - View Dependent Claims (10)
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11. A display apparatus comprising:
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a housing having an aperture; an input interface for receiving one or more frames of images; a green laser device comprising; a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anda laser stripe region overlying the active region, the laser stripe region comprising conductive oxide and being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first etched facet provided on the first end of the laser stripe region; and a second etched facet provided on the second end of the laser stripe region; a power source electrically coupled to the green laser device;
wherein the green laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm. - View Dependent Claims (12, 13, 14)
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15. A display apparatus comprising:
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a housing having an aperture; an input interface for receiving one or more frames of images; a green laser device comprising; a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer comprising a quantum well region or a double hetero-structure region; anda p-type cladding region overlying the active region, the p-type cladding region being formed from a low temperature GaN, AlInGaN, or AlGaN material; a laser stripe region formed overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first etched facet provided on the first end of the laser stripe region; and a second etched facet provided on the second end of the laser stripe region; a power source electrically coupled to the green laser device;
wherein the green laser device is configured to emit electromagnetic radiation with a peak wavelength between 500 nm and 580 nm. - View Dependent Claims (16, 17)
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18. A display apparatus comprising:
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a housing having an aperture; an input interface for receiving one or more frames of images; a laser device comprising; a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-31) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation, the offcut of the orientation characterized by an offcut toward an a-plane;
the offcut toward the a-plane being greater in magnitude than 1 degree and less than about 12 degrees;an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anda p-type cladding region overlying the active region; a laser stripe region overlying a portion of the semipolar surface, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first facet provided on the first end of the laser stripe region; a second facet provided on the second end of the laser stripe region; and a power source electrically coupled to the laser device;
wherein the laser device is configured to emit an electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 580 nm. - View Dependent Claims (19, 20)
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Specification