Semiconductor device producing method

• US 9,169,553 B2
• Filed: 06/08/2011
• Issued: 10/27/2015
• Est. Priority Date: 11/11/2002
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Hitachi Kokusai Electric Incorporated (Hitachi, Ltd.)
• Inventors: Sakai, Masanori, Shima, Nobuhito, Okuda, Kazuyuki
• Primary Examiner(s): BURKHART, ELIZABETH A
• Application Number:
  US13/156,025
• Publication Number:
  US 20110300722A1
• Time in Patent Office: 1,602 Days
• Field of Search: 427/579, 427/569, 427/578, 118/715
• US Class Current: 1/1
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields

Abstract

A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.

Claims

1. A semiconductor device producing method comprising:

transferring a substrate into a processing chamber;

thereafter forming a silicon nitride film on the substrate by repeating the following a plurality of times in the following order;

supplying a gas including silicon into the processing chamber,

exhausting the processing chamber,

supplying a plasma-activated ammonia gas into the processing chamber, and

exhausting the processing chamber;

thereafter transferring the substrate out of the processing chamber;

thereafter removing accretion that has been adhered to an inside of the processing chamber by supplying a cleaning gas including fluorine into the processing chamber; and

thereafter removing fluorine included in the cleaning gas remaining in the processing chamber and forming a silicon nitride film inside the processing chamber by repeating the following a plurality of times;

supplying the gas including silicon into the processing chamber,

exhausting the processing chamber,

supplying the plasma-activated ammonia gas into the processing chamber, and

exhausting the processing chamber, wherein

the gas including silicon and the plasma-activated ammonia gas are respectively supplied from first and second nozzles, the first and second nozzles being independently and exclusively connected to the processing chamber,

the cleaning gas is supplied from the first nozzle and is not supplied from the second nozzle,

an inert gas is supplied from the second nozzle while supplying the cleaning gas, and wherein

a temperature in the processing chamber when removing fluorine included in the cleaning as remaining in the processing chamber and forming the silicon nitride film inside the processing chamber is lower than a temperature in the processing chamber when supplying the cleaning gas into the process chamber,

the temperature in the processing chamber when removing fluorine included in the cleaning as remaining in the processing chamber and forming the silicon nitride film inside the processing chamber is the same as a temperature in the processing chamber when forming the silicon nitride film on the substrate, and

a time for removing fluorine included in the cleaning as remaining in the processing chamber and forming the silicon nitride film inside the processing chamber is shorter than a time for forming the silicon nitride film on the substrate.

2. The semiconductor device producing method according to claim 1, wherein the plasma-activated ammonia gas reacts with fluorine included in the cleaning gas remaining in the processing chamber.

3. The semiconductor device producing method according to claim 2, wherein a reaction probability between the plasma-activated ammonia gas and fluorine is higher than a reaction probability between the gas including silicon and fluorine.