Parallel batch chemical vapor deposition system

• US 9,169,562 B2
• Filed: 05/11/2012
• Issued: 10/27/2015
• Est. Priority Date: 05/25/2010
• Status: Active Grant

• Current Assignee: Singulus MOCVD GmbH I.GR.
• Original Assignee: Singulus MOCVD GmbH I.GR.
• Inventors: Sferlazzo, Piero, Simonelli, Darren M.
• Primary Examiner(s): Baldwin, Gordon R
• Assistant Examiner(s): Bennett, Charlee
• Application Number:
  US13/469,515
• Publication Number:
  US 20120219713A1
• Time in Patent Office: 1,264 Days
• Field of Search: 118/719
• US Class Current: 1/1
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate

Abstract

Described is a parallel batch CVD system that includes a pair of linear deposition chambers in a parallel arrangement and a robotic loading module disposed between the chambers. Each chamber includes a linear arrangement of substrate receptacles, gas injectors to supply at least one gas in a uniform distribution across the substrates, and a heating module for uniformly controlling a temperature of the substrates. The robotic loading module is configured for movement in a direction parallel to a length of each of the chambers and includes at least one cassette for carrying substrates to be loaded into the substrate receptacles of the chambers. The parallel batch CVD system is suitable for high volume processing of substrates. The CVD processes performed in the chambers can be the same process. Alternatively, the CVD processes may be different and substrates processed in one chamber may be subsequently processed in the other chamber.

Claims

1. A parallel batch chemical vapor deposition (CVD) system comprising:

a pair of linear deposition chambers in a parallel arrangement, each of the linear deposition chambers comprising;

a plurality of substrate receptacles each configured to receive a substrate, all of the substrate receptacles having a diameter and being arranged in a single row that is parallel to a length of the deposition chamber to hold the substrates in a straight line and horizontal coplanar configuration;

a showerhead disposed above the substrate receptacles and having a plurality of gas injectors, each of the gas injectors having a port in the shape of a linear slot having a length that is greater than the diameters of the substrate receptacles, each of the linear slots being parallel to the linear slots of the other gas injectors and parallel to the single row of substrate receptacles, each of the gas injectors supplying a different gas through the respective one of the ports toward the substrate receptacles; and

a heating module for uniformly controlling a temperature of the substrates disposed in the substrate receptacles; and

a robotic loading module disposed between the linear deposition chambers and configured for movement in a direction parallel to a length of each of the linear deposition chambers, the robotic loading module comprising at least one cassette for carrying a plurality of substrates to be loaded into the substrate receptacles of the linear deposition chambers.

2. The parallel batch CVD system of claim 1 wherein the substrates are semiconductor wafers.

3. The parallel batch CVD system of claim 1 wherein the robotic loading module is configured to alternate loading of the two deposition chambers during translation in one of a forward direction and a reverse direction.

4. The parallel batch CVD system of claim 1 wherein the robotic loading module is configured to load one of the linear deposition chambers during translation in a forward direction and to load the other of the linear deposition chambers during translation in a reverse direction.