High frequency capacitance-voltage nanoprobing characterization

• US 9,170,273 B2
• Filed: 12/09/2013
• Issued: 10/27/2015
• Est. Priority Date: 12/09/2013
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: GLOBALFOUNDRIES U.S. 2 LLC (GlobalFoundries, Inc.)
• Inventors: Kane, Terence L., Stanton, Matthew F., Tenney, Michael P.
• Primary Examiner(s): Ippolito, Nicole
• Assistant Examiner(s): STOFFA, WYATT A
• Application Number:
  US14/100,248
• Publication Number:
  US 20150160261A1
• Time in Patent Office: 687 Days
• US Class Current: 1/1
• CPC Class Codes: G01Q 60/40 Conductive probes
• CPC Class Codes: G01R 27/2605 Measuring capacitance capacitive sensors G01D5/24
• CPC Class Codes: H01J 49/062 Ion guides linear ion traps performing mass selection H01J49/4225, mass filters H01J49/421
• CPC Class Codes: H01J 49/10 Ion sources; Ion guns
• CPC Class Codes: H01J 49/26 Mass spectrometers or separator tubes

Abstract

A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure may include exposing first and second contact regions associated with the discrete device, coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer, and coupling the high-frequency impedance probe to a first and a second atomic force probe tip. Using an atomic force microscope, the first atomic force probe tip is coupled to the exposed first contact region and the second atomic force probe tip is coupled to the exposed second contact region. The C-V characteristic for the discrete device is then measured on the impedance analyzer, whereby the impedance analyzer applies an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.

Claims

1. A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure, the method comprising:

exposing first and second contact regions associated with the discrete device, wherein the exposing of the first and second contact regions includes;

applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency;

generating, from the Argon ion source, a collimated ion beam incident on the surface of the semiconductor structure corresponding to the first and second contact regions for planar removal of layers of the surface; and

controlling exposure of the first and second contact regions underlying the surface of the semiconductor structure using an end-point detector based on the planar removal of the layers;

coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer;

coupling the high-frequency impedance probe to a first and a second atomic force probe tip;

coupling, using an atomic force microscope, the first atomic force probe tip to the exposed first contact region;

coupling, using the atomic force microscope, the second atomic force probe tip to the exposed second contact region; and

measuring the C-V characteristic for the discrete device on the impedance analyzer, the impedance analyzer applying an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.

2. The method of claim 1, wherein the generated collimated ion beam is incident on the surface of the semiconductor structure at an angle of about 3-12 degrees.

3. The method of claim 1, wherein the radio frequency (RF) comprises a 1.4 MHz signal.

4. The method of claim 1, wherein the end-point detector comprises a secondary ion mass spectroscopy (SIMS) detector.

5. The method of claim 1, wherein the planar removal of layers comprises removing layers of silicon nitride using etch selective hexafluoroethane (C₂F₆) gas.

6. The method of claim 1, wherein the planar removal of layers comprises removing layers of silicon oxide using etch selective tetrafluoromethane (CF₄) gas.

7. The method of claim 1, wherein the planar removal of layers comprises removing layers of copper metallization.

8. The method of claim 1, wherein the discrete device comprises a FinFET transistor structure.

9. The method of claim 1, wherein the exposed first and second contact regions comprises tungsten studs coupled to the discrete device.

10. The method of claim 1, wherein the C-V measurement is utilized to determine doping concentration in the discrete device.

11. The method of claim 1, wherein the high-frequency impedance probe is coupled to a first and a second electrical conductor, the first electrical conductor coupled to a ground connection of the high-frequency impedance probe and the second electrical conductor coupled to a signal conductor of the high-frequency impedance probe.

12. The method of claim 11, wherein the first electrical conductor is coupled to the first atomic force probe tip and the second electrical conductor is coupled to the second atomic force probe tip.

13. A method of generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure, the method comprising:

applying a voltage in the range of about 50 eV to less than 300 eV to an inductively coupled Argon ion source operating at a radio frequency;

generating, from the Argon ion source, a collimated ion beam incident on a crystalline surface of the semiconductor structure for planar removal of layers of the crystalline surface, wherein the collimated ion beam minimizes surface amorphization of the crystalline surface of the semiconductor structure;

controlling exposure of first and second contact regions underlying the crystalline surface of the semiconductor structure using an end-point detector based on the planar removal of the layers;

coupling a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz to an impedance analyzer;

coupling the high-frequency impedance probe to a first and a second atomic force probe tip;

coupling, using an atomic force microscope, the first atomic force probe tip to the exposed first contact region;

coupling, using the atomic force microscope, the second atomic force probe tip to the exposed second contact region; and

measuring the C-V characteristic for the discrete device on the impedance analyzer, the impedance analyzer applying an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and second contact regions of the discrete device using the high-frequency impedance probe.

14. The method of claim 13, wherein the generated collimated ion beam is incident on the surface of the semiconductor structure at an angle of approximately 3-12 degrees.

15. The method of claim 13, wherein the radio frequency (RF) comprises a 1.4 MHz signal.

16. A system for generating a capacitance-voltage (C-V) characteristic for a discrete device formed within a semiconductor structure, the system comprising:

a high-frequency impedance probe having a frequency range of about 5 Mhz to about 110 Mhz;

an impedance analyzer that couples to the high-frequency impedance probe;

an atomic force microscope having a first and a second atomic force probe tip, the first atomic force probe tip being coupled to both the high-frequency impedance probe and a first exposed contact region corresponding to the discrete device, and the second atomic force probe tip being coupled to both the high-frequency impedance probe and the second exposed contact region corresponding to the discrete device, wherein the C-V characteristic for the discrete device is measured on the impedance analyzer based on the impedance analyzer applying an operating frequency corresponding to the frequency range of about 5 Mhz to about 110 Mhz to the first and the second exposed contact region of the discrete device using the high-frequency impedance probe; and

an ion beam milling apparatus for exposing the first and the second contact region associated with the discrete device, wherein the ion beam milling apparatus includes;

an inductively coupled Argon ion source that operates at a radio frequency of about 1.4 MHz and an acceleration voltage in the range of about 50 eV to less than 300 eV, wherein the Argon ion source generates a collimated ion beam incident on the semiconductor structure at a location corresponding to the first and the second contact region, and wherein the first and the second contact region underlying a surface of the semiconductor structure is controllable exposed using an end-point detector.

17. The system of claim 16, further comprising:

an XYZ manipulation stage that holds the high-frequency impedance probe, the XYZ manipulation stage manipulating the XYZ position of the high-frequency impedance probe for optimizing the measured C-V characteristic for the discrete device by controlling both a first physical tension associated with a first electrical conductor coupled to a ground connection of the high-frequency impedance, and a second physical tension associated with a second electrical conductor coupled to a signal conductor of the high-frequency impedance probe.