Laser assisted direct bonding
First Claim
1. A method comprising:
- placing a first surface of a first substrate in contact with a second surface of a second substrate to create a direct bond between the first substrate and the second substrate at a contact location, the contact location being defined where at least a portion of the first surface of the first substrate contacts at least a portion of the second surface of the second substrate; and
directing a laser on at least a portion of the contact location to further strengthen the direct bond between the first substrate and the second substrate,wherein the laser comprises a continuous wave laser that delivers between approximately 1 Joule per square millimeter (J/mm2) and approximately 8 Joules per square millimeter, wherein the first and second surfaces are selectively prepared such that the direct bond is solely formed from a face-to-face contact at the contact location of the selectively prepared surfaces, wherein the face-to-face contact generates a molecular attraction having an interfacial fracture toughness that prevents separation between the first and second substrates, and wherein directing the laser on the at least the portion of the contact location comprises heating only a region of the first substrate and the second substrate that is within approximately 100 microns of the contact location to a temperature between approximately 900 degrees Celsius and approximately 1200 degrees Celsius without heating an area of the first substrate and the second substrate that is beyond approximately 100 microns from the contact location.
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Accused Products
Abstract
Techniques are described for directly bonding different substrates together. In some examples, a technique includes placing a first surface of a first substrate in contact with a second surface of a second substrate to directly bond the first substrate to the second substrate at a contact location. The contact location is defined where at least a portion of the first surface of the first substrate contacts at least a portion of the second surface of the second substrate. The technique may also include directing a laser beam on at least a portion of the contact location to strengthen the direct bond between the first substrate and the second substrate. In this manner, a direct bond may be heated with localized laser energy to strengthen the direct bond. Localized laser energy may create a strong direct bond while minimizing thermal defects in regions proximate the direct bond.
41 Citations
21 Claims
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1. A method comprising:
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placing a first surface of a first substrate in contact with a second surface of a second substrate to create a direct bond between the first substrate and the second substrate at a contact location, the contact location being defined where at least a portion of the first surface of the first substrate contacts at least a portion of the second surface of the second substrate; and directing a laser on at least a portion of the contact location to further strengthen the direct bond between the first substrate and the second substrate, wherein the laser comprises a continuous wave laser that delivers between approximately 1 Joule per square millimeter (J/mm2) and approximately 8 Joules per square millimeter, wherein the first and second surfaces are selectively prepared such that the direct bond is solely formed from a face-to-face contact at the contact location of the selectively prepared surfaces, wherein the face-to-face contact generates a molecular attraction having an interfacial fracture toughness that prevents separation between the first and second substrates, and wherein directing the laser on the at least the portion of the contact location comprises heating only a region of the first substrate and the second substrate that is within approximately 100 microns of the contact location to a temperature between approximately 900 degrees Celsius and approximately 1200 degrees Celsius without heating an area of the first substrate and the second substrate that is beyond approximately 100 microns from the contact location. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method comprising:
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selectively preparing a first surface of a first substrate and a second surface of a second substrate by; polishing a first surface of a first substrate and a second surface of a second substrate such that the first surface and the second surface each define an average surface roughness (Ra) less than approximately 1 nanometer, and cleaning the first surface and the second surface such that the first surface and the second surface are substantially free of particles greater than 0.1 micrometers, wherein the polishing and the cleaning of the first surface and the second surface reduces an amount of energy needed to strengthen, with a laser, a direct bond between the first substrate and the second substrate; placing the first surface in contact with the second surface to create a direct bond between the first substrate and the second substrate at a contact location, the contact location defined where at least a portion of the first surface of the first substrate contacts at least a portion of the second surface of the second substrate; and directing a laser across at least a portion of a length of the contact location to strengthen the direct bond at the contact location between the first substrate and the second substrate, wherein the laser comprises a continuous wave laser that delivers a range of energy to the contact location from between approximately 1 Joule per square millimeter (J/mm2) and approximately 8 Joules per square millimeter, wherein the first and second surfaces are selectively prepared such that the direct bond is solely formed from a face-to-face contact at the contact location of the selectively prepared surfaces, wherein the face-to-face contact generates a molecular attraction having an interfacial fracture toughness that prevents separation between the first and second substrates, and wherein directing the laser on the at least the portion of the contact location comprises heating only a region of the first substrate and the second substrate that is within approximately 100 microns of the contact location to a temperature between approximately 900 degrees Celsius and approximately 1200 degrees Celsius without heating an area of the first substrate and the second substrate that is beyond approximately 100 microns from the contact location. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification