Method for forming a power semiconductor device
First Claim
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1. A method for forming a semiconductor device, the method comprising:
- providing a semiconductor body which comprises a main surface and a first n-type semiconductor region;
forming a trench which extends from the main surface into the first n-type semiconductor region; and
forming a dielectric layer comprising fixed negative charges on a surface of the trench, comprising performing at least one atomic layer deposition using an organometallic precursor.
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Abstract
A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor.
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Citations
10 Claims
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1. A method for forming a semiconductor device, the method comprising:
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providing a semiconductor body which comprises a main surface and a first n-type semiconductor region; forming a trench which extends from the main surface into the first n-type semiconductor region; and forming a dielectric layer comprising fixed negative charges on a surface of the trench, comprising performing at least one atomic layer deposition using an organometallic precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification