Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a first layer;
an aramid film over the first layer;
a first insulating layer over the first layer;
a circuit comprising a transistor over the first insulating layer;
a conductive layer over the transistor;
a second insulating layer over the conductive layer;
a second layer over the second insulating layer;
wherein the first layer comprises a fibrous body and an organic resin,wherein the second layer comprises a fibrous body and an organic resin, andwherein the aramid film has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer.
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Abstract
In a semiconductor integrated circuit sandwiched between a pair of a first impact resistance layer and a second impact resistance layer, an impact diffusion layer is provided between the semiconductor integrated circuit and the second impact resistance layer. By provision of the impact resistance layer against the external stress and the impact diffusion layer for diffusing the impact, force applied to the semiconductor integrated circuit per unit area is reduced, so that the semiconductor integrated circuit is protected. The impact diffusion layer preferably has a low modulus of elasticity and high breaking modulus.
70 Citations
66 Claims
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1. A semiconductor device comprising:
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a first layer; an aramid film over the first layer; a first insulating layer over the first layer; a circuit comprising a transistor over the first insulating layer; a conductive layer over the transistor; a second insulating layer over the conductive layer; a second layer over the second insulating layer; wherein the first layer comprises a fibrous body and an organic resin, wherein the second layer comprises a fibrous body and an organic resin, and wherein the aramid film has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 29, 30)
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15. A semiconductor device comprising:
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a first layer; a first organic layer over the first layer; a first insulating layer over the first layer; a circuit comprising a transistor over the first insulating layer; a conductive layer over the transistor; a second insulating layer over the conductive layer; a second layer over the second insulating layer; wherein the first layer comprises a fibrous body and an organic resin, wherein the second layer comprises a fibrous body and an organic resin, and wherein the first organic layer has a lower modulus of elasticity and higher breaking strength than the first layer and the second layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 31, 32)
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33. A semiconductor device comprising:
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a first layer; an aramid film over the first layer, wherein the aramid film has a lower modulus of elasticity and higher breaking strength than the first layer; a first insulating layer over the aramid film; a circuit comprising a transistor over the first insulating layer; a conductive layer over the transistor; and a second insulating layer over the conductive layer, wherein the transistor comprises a semiconductor layer comprising an oxide semiconductor, the semiconductor layer comprising a channel formation region. - View Dependent Claims (34, 35, 36, 37, 50, 51, 52, 53, 54)
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38. A semiconductor device comprising:
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a first layer; an aramid film over the first layer, wherein the aramid film has a lower modulus of elasticity and higher breaking strength than the first layer; and an integrated circuit comprising a transistor over the aramid film, wherein the transistor comprises a semiconductor layer comprising an oxide semiconductor, the semiconductor layer comprising a channel formation region, and wherein the semiconductor device is flexible. - View Dependent Claims (39, 40, 41, 55, 56, 57, 58)
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42. A semiconductor device comprising:
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an integrated circuit comprising a transistor; a layer over the integrated circuit; and an aramid film over the layer, wherein the aramid film has a lower modulus of elasticity and higher breaking strength than the layer, wherein the transistor comprises a semiconductor layer comprising an oxide semiconductor, the semiconductor layer comprising a channel formation region, and wherein the semiconductor device is flexible. - View Dependent Claims (43, 44, 45, 59, 60, 61, 62)
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46. A semiconductor device comprising:
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a first layer; a first aramid film over the first layer, wherein the first aramid film has a lower modulus of elasticity and higher breaking strength than the first layer; an integrated circuit comprising a transistor over the first aramid film; and a second aramid film over the integrated circuit, wherein the transistor comprises a semiconductor layer comprising an oxide semiconductor, the semiconductor layer comprising a channel formation region, and wherein the semiconductor device is flexible. - View Dependent Claims (47, 48, 49, 63, 64, 65, 66)
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Specification