Field plate trench transistor and method for producing it
First Claim
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1. A semiconductor transistor including a field plate trench transistor comprising:
- a trench structure;
a field electrode structure embedded in the trench structure, the field electrode structure being electrically insulated from a semiconductor body by an insulation structure; and
a voltage divider between a source terminal and a drain terminal,the voltage divider including a series circuit comprising at least one resistor and at least one diode, the series circuit being connected between the source and drain terminals, whereinthe field electrode structure is electrically connected to the voltage divider, and the at least one diode is a body substrate diode.
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Abstract
A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.
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Citations
18 Claims
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1. A semiconductor transistor including a field plate trench transistor comprising:
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a trench structure; a field electrode structure embedded in the trench structure, the field electrode structure being electrically insulated from a semiconductor body by an insulation structure; and a voltage divider between a source terminal and a drain terminal, the voltage divider including a series circuit comprising at least one resistor and at least one diode, the series circuit being connected between the source and drain terminals, wherein the field electrode structure is electrically connected to the voltage divider, and the at least one diode is a body substrate diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 17, 18)
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10. A field plate trench transistor having a semiconductor body comprising:
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a trench structure; a field electrode structure embedded in the trench structure, the field electrode structure being electrically insulated from the semiconductor body by an insulation structure; and a voltage divider lying between a source terminal and a drain terminal and/or a gate terminal and a drain terminal, wherein the voltage divider is realized as a series circuit comprising a plurality of diodes, the series circuit being connected between the source and drain terminals, the field electrode structure is electrically connected to the voltage divider, and the plurality of diodes comprise a body substrate diode. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification