Semiconductor device with an electrode buried in a cavity
First Claim
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1. A semiconductor device, comprising:
- an active device region formed in an epitaxial layer disposed on a semiconductor substrate;
a buried electrode disposed below the active device region in a cavity formed within the semiconductor substrate, the buried electrode comprising an electrically conductive material different than the material of the semiconductor substrate, andan electrically conductive contact which extends from the buried electrode to a surface of the semiconductor substrate,wherein the material of the semiconductor substrate is doped more heavily in a region adjacent the buried electrode than in a region of the semiconductor substrate between the active device region and the more heavily doped region of the semiconductor substrate material.
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Abstract
A semiconductor device includes an active device region formed in an epitaxial layer disposed on a semiconductor substrate and a buried electrode disposed below the active device region in a cavity formed within the semiconductor substrate. The buried electrode includes an electrically conductive material different than the material of the semiconductor substrate.
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Citations
13 Claims
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1. A semiconductor device, comprising:
an active device region formed in an epitaxial layer disposed on a semiconductor substrate; a buried electrode disposed below the active device region in a cavity formed within the semiconductor substrate, the buried electrode comprising an electrically conductive material different than the material of the semiconductor substrate, and an electrically conductive contact which extends from the buried electrode to a surface of the semiconductor substrate, wherein the material of the semiconductor substrate is doped more heavily in a region adjacent the buried electrode than in a region of the semiconductor substrate between the active device region and the more heavily doped region of the semiconductor substrate material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device, comprising:
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an active device region formed in an epitaxial layer disposed on a semiconductor substrate; a buried electrode disposed below the active device region in a cavity formed within the semiconductor substrate, the buried electrode comprising an electrically conductive material different than the material of the semiconductor substrate, and an electrically conductive contact which extends from the buried electrode to a surface of the semiconductor substrate, wherein the contact extends vertically from the buried electrode to the opposite surface of the semiconductor substrate on which the epitaxial layer is disposed.
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Specification