Storage element and memory
First Claim
1. A storage element comprising:
- a storage layer which stores information based on a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by passing a current through the means for storing information;
a means for increasing spin pumping;
a means for suppressing spin pumping, wherein the means for suppressing spin pumping is provided between the means for increasing spin pumping and the storage layer; and
a cap layer provided directly adjacent to the means for increasing spin pumping opposite the means for suppressing spin pumping.
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Accused Products
Abstract
A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
25 Citations
18 Claims
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1. A storage element comprising:
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a storage layer which stores information based on a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by passing a current through the means for storing information; a means for increasing spin pumping; a means for suppressing spin pumping, wherein the means for suppressing spin pumping is provided between the means for increasing spin pumping and the storage layer; and a cap layer provided directly adjacent to the means for increasing spin pumping opposite the means for suppressing spin pumping. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A memory comprising:
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a storage element; and two types of mutually intersecting lines, wherein the storage element includes; a storage layer which stores information based on a magnetization state of a magnetic material, wherein the magnetization state is configured to be changed by passing a current through the storage layer; a means for increasing spin pumping; a means for suppressing spin pumping, wherein the means for suppressing spin pumping is provided between the means for increasing spin pumping and the storing layer; and a cap layer provided directly adjacent to the means for increasing spin pumping opposite the means for suppressing spin pumping. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification