Integrated microelectromechanical system devices and methods for making the same
First Claim
1. An integrated Microelectromechanical Systems (“
- MEMS”
) device, comprising;
a substrate;
a transition portion connected to and at least partially extending transversely away from a major surface of the substrate, said transition portion comprising a hollow structure in which an elongate conductor is suspended;
a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and
a gas gap between the major surface of the substrate and the MEMS filter device.
1 Assignment
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Accused Products
Abstract
Integrated Microelectromechanical System (“MEMS”) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.
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Citations
11 Claims
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1. An integrated Microelectromechanical Systems (“
- MEMS”
) device, comprising;a substrate; a transition portion connected to and at least partially extending transversely away from a major surface of the substrate, said transition portion comprising a hollow structure in which an elongate conductor is suspended; a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and a gas gap between the major surface of the substrate and the MEMS filter device. - View Dependent Claims (2)
- MEMS”
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3. An integrated Microelectromechanical Systems (“
- MEMS”
) device, comprising;a substrate; a transition portion connected to and at least partially extending transversely away from a major surface of the substrate; a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; a gas gap between the major surface of the substrate and the MEMS filter device; and second electronic circuitry is formed on the major surface of the substrate so as to reside between the substrate and the MEMS filter device, wherein a gas gap exists between the second electrical circuitry and the MEMS filter device; wherein a first conductive material used to fabricate the MEMS filter device has a first melting point that is different from second melting points of all second conductive materials used to form the second electronic circuitry by no more than 100°
C.
- MEMS”
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4. An integrated Microelectromechanical Systems (“
- MEMS”
) device, comprising;a substrate; a transition portion connected to and at least partially extending transversely away from a major surface of the substrate; a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; a gas gap between the major surface of the substrate and the MEMS filter device; and second electronic circuitry is formed on the major surface of the substrate so as to reside between the substrate and the MEMS filter device, wherein a gas gap exists between the second electrical circuitry and the MEMS filter device; wherein an isolation between the MEMS filter device and the second electronic circuitry is less than forty decibels.
- MEMS”
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5. An integrated Microelectromechanical Systems (“
- MEMS”
) device, comprising;a substrate; a transition portion connected to and at least partially extending transversely away from a major surface of the substrate; a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and a gas gap between the major surface of the substrate and the MEMS filter device; wherein the transition portion comprises a three dimensional hollow ground structure in which an elongate center conductor is suspended. - View Dependent Claims (6, 7)
- MEMS”
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8. An integrated Microelectromechanical Systems (“
- MEMS”
) device, comprising;a substrate; a transition portion connected to and at least partially extending transversely away from a major surface of the substrate; a MEMS filter device (a) mechanically suspended above the major surface of the substrate exclusively by the transition portion, and (b) electrically connected to first electronic circuitry external thereto by the transition portion; and a gas gap between the major surface of the substrate and the MEMS filter device; wherein the RF MEMS filter device comprises at least two adjacent electronic elements which are electrically isolated from each other via a ground structure of the transition portion. - View Dependent Claims (9, 10, 11)
- MEMS”
Specification