Neural sensing device and method for making the same

• US 9,173,583 B2
• Filed: 03/15/2013
• Issued: 11/03/2015
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: Advanced Semiconductor Engineering Inc (ASE Technology Holding Co., Ltd.)
• Original Assignee: Advanced Semiconductor Engineering Inc (ASE Technology Holding Co., Ltd.)
• Inventors: Chen, Kuo-Hua, Chiou, Jin-Chern, Chang, Chih-Wei
• Primary Examiner(s): Cohen, Lee S
• Application Number:
  US13/840,817
• Publication Number:
  US 20140275929A1
• Time in Patent Office: 963 Days
• Field of Search: 600/373, 600/377, 600/378, 607/116
• US Class Current: 1/1
• CPC Class Codes: A61B 2562/028 Microscale sensors, e.g. electromechanical sensors [MEMS]
• CPC Class Codes: A61B 2562/043 in a linear array
• CPC Class Codes: A61B 5/24 Detecting, measuring or recording bioelectric or biomagnetic signals of the body or parts thereof
• CPC Class Codes: A61B 5/291 for electroencephalography [EEG]
• CPC Class Codes: A61B 5/296 for electromyography [EMG]
• CPC Class Codes: A61B 5/398 Electrooculography [EOG], e.g. detecting nystagmus; Electroretinography [ERG]
• CPC Class Codes: A61B 5/6868 Brain
• CPC Class Codes: A61N 1/0529 Electrodes for brain stimulation
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68304 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/02331 Multilayer structure
• CPC Class Codes: H01L 2224/03 : Manufacturing methods
• CPC Class Codes: H01L 2224/05569 : the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

The present invention provides a neural sensing device and method for making the same. The neural sensing device includes a base, an integrated circuit portion, a plurality of microprobes and at least one conductive via. The base has an active surface and a backside surface. The integrated circuit portion is disposed on the active surface of the base. The microprobes protrude from the backside surface of the base. The through silicon via is disposed in the base and electrically connects the integrated circuit portion and the microprobes. Each of the microprobes includes an isolation layer partially covering a conductive layer.

Claims

1. A neural sensing device, comprising:

a base having an active surface and a backside surface;

an integrated circuit portion disposed on the active surface of the base; and

a plurality of microprobes disposed on the backside surface of the base, each of the microprobes comprising;

a probe body protruding from the backside surface of the base and including a tip at a distal end;

a first isolation layer covering the probe body;

a conductive layer covering the first isolation layer and electrically connected to the integrated circuit portion; and

a second isolation layer covering the conductive layer and having an opening to expose the conductive layer around a portion of the tip.

2. The neural sensing device of claim 1, further comprising a conductive via disposed in the base and electrically connected to the integrated circuit portion and the conductive layer.

3. The neural sensing device of claim 1, wherein the integrated circuit portion comprises a plurality of electrical elements, a plurality of metal layers and at least one dielectric layer, the electrical elements disposed adjacent to the active surface of the base and covered by the dielectric layer, and the metal layers embedded in the dielectric layer.

4. The neural sensing device of claim 1, wherein the probe body of each of the microprobes is formed from the base.

5. The neural sensing device of claim 1, wherein the material of the base and the probe body is the same.

6. The neural sensing device of claim 1, wherein the materials of the first isolation layer and the second isolation layer are insulative.

7. The neural sensing device of claim 1, wherein the exposed portion of the conductive layer around the tip is about 30 to 70 μ

m in length.

8. The neural sensing device of claim 1, further comprising:

at least one redistribution layer disposed on and electrically connected to the integrated circuit portion;

at least one protection layer covering the redistribution layer; and

at least one under bump metallurgy (UBM) disposed on the protection layer and electrically connected to the redistribution layer.

9. The neural sensing device of claim 1, wherein the probe body of each of the microprobes has a main portion and the tip, the main portion connected to the base and the tip, the diameter of the portion of the main portion connected to the base having a diameter greater than the portion of the main portion connected to the tip.

10. The neural sensing device of claim 2, wherein the conductive via is a through silicon via.

11. The neural sensing device of claim 10, wherein the base has at least one base hole, the through silicon via is disposed in the base hole and has a circular insulation material and an interconnection metal, the circular insulation material is disposed on a sidewall of the base hole and defines a central groove, and the interconnection metal is disposed in the central groove.

12. The neural sensing device of claim 10, wherein the through silicon via further penetrates through the integrated circuit portion.

13. A neural sensing device, comprising:

a base;

an integrated circuit portion disposed on an active surface of the base;

a plurality of microprobes protruding from a backside surface of the base, each of the microprobes having a probe body made of the same material as the base and covered by a first isolation layer, wherein a conductive layer covers the first isolation layer and is covered by a second isolation layer except for a portion of a tip of the microprobe; and

at least one through silicon via disposed in the base and electrically connecting the integrated circuit portion and the microprobes.

14. The neural sensing device of claim 13, wherein the base has at least one base hole, the through silicon via is disposed in the base hole and has a circular insulation material and an interconnection metal, the circular insulation material is disposed on a sidewall of the base hole and defines a central groove, and the interconnection metal is disposed in the central groove.

15. The neural sensing device of claim 13, wherein the through silicon via further penetrates through the integrated circuit portion.

16. The neural sensing device of claim 13, further comprising:

at least one redistribution layer disposed on and electrically connected to the integrated circuit portion and the conductive via;

at least one protection layer covering the redistribution layer; and

at least one under bump metallurgy (UBM) disposed on the protection layer and electrically connected to the redistribution layer.

17. The neural sensing device of claim 13, wherein the exposed portion of the conductive layer around the tip of the microprobe is about 30 to 70 μ

m in length.

18. The neural sensing device of claim 13, wherein the integrated circuit portion comprises a plurality of electrical elements, a plurality of metal layers and at least one dielectric layer, the electrical elements disposed adjacent to the active surface of the base and covered by the dielectric layer, and the metal layers embedded in the dielectric layer.

19. The neural sensing device of claim 13, wherein the materials of the first isolation layer and the second isolation layer are insulative.