×

Tungsten gates for non-planar transistors

  • US 9,177,867 B2
  • Filed: 09/30/2011
  • Issued: 11/03/2015
  • Est. Priority Date: 09/30/2011
  • Status: Active Grant
First Claim
Patent Images

1. A transistor gate, comprising:

  • a pair of gate spacers; and

    a gate electrode disposed between the pair of gate spacers, wherein the gate electrode includes;

    an NMOS work-function material adjacent at least a portion of the pair of gates spacers and comprising aluminum, titanium, and carbon;

    a titanium-containing gate fill barrier adjacent the NMOS work-function material; and

    a tungsten-containing gate fill material adjacent the gate fill barrier.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×