Schottky clamped radio frequency switch
First Claim
1. A radio frequency switch with a clamped body comprising:
- a channel that separates a source and a drain;
a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain; and
a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region;
wherein the clamp region, the source, and the drain are all doped with a lightly doped drain implant that has a moderate implant concentration;
wherein the source and drain are also doped with a heavy implant that has a heavy implant concentration;
wherein the lower dopant concentration is less than a dopant concentration of the source and drain by at least the difference between the moderate implant concentration and the heavy implant concentration;
wherein the clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions;
wherein the radio frequency switch can operate in a plurality of operating modes; and
wherein the pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the radio frequency switch is operating.
3 Assignments
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Accused Products
Abstract
Various methods and devices that involve radio frequency (RF) switches with clamped bodies are provided. An exemplary RF switch with a clamped body comprises a channel that separates a source and a drain. The RF switch also comprises a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain. The RF switch also comprises a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region. The clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions. The RF switch can operate in a plurality of operating modes. The pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the RF switch is operating.
40 Citations
20 Claims
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1. A radio frequency switch with a clamped body comprising:
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a channel that separates a source and a drain; a clamp region that spans the channel, extends into the source and drain, and has a lower dopant concentration than both the source and drain; and a pair of matching silicide regions formed on either side of the channel and in contact with the clamp region; wherein the clamp region, the source, and the drain are all doped with a lightly doped drain implant that has a moderate implant concentration; wherein the source and drain are also doped with a heavy implant that has a heavy implant concentration; wherein the lower dopant concentration is less than a dopant concentration of the source and drain by at least the difference between the moderate implant concentration and the heavy implant concentration; wherein the clamp region forms a pair of Schottky diode barriers with the pair of matching silicide regions; wherein the radio frequency switch can operate in a plurality of operating modes; and wherein the pair of Schottky diode barriers provide a constant sink for accumulated charge in the clamped body that is independent of the operating mode in which the radio frequency switch is operating. - View Dependent Claims (2, 3, 4, 5)
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6. A radio frequency switch with a clamped body comprising:
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a channel separating a source and a drain of the radio frequency switch; a first clamp region of a semiconductor material that;
(i) spans the channel;
(ii) comprises a first contact region extending into the source; and
(iii) comprises a second contact region extending into the drain;a first silicide region formed on the first contact region; and a second silicide region formed on the second contact region; wherein the first clamp region of the semiconductor material has a lower dopant concentration than both the source and the drain; wherein the first clamp region, the source, and the drain are all doped with a lightly doped drain implant that has a moderate implant concentration; wherein the source and drain are also doped with a heavy implant that has a heavy implant concentration; wherein the lower dopant concentration is less than a dopant concentration of the source and drain by at least the difference between the moderate implant concentration and the heavy implant concentration; wherein the first contact region forms a first Schottky diode barrier with the first silicide region; and wherein the second contact region forms a second Schottky diode barrier with the second silicide region. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A radio frequency switch comprising:
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a gate that comprises a gate electrode and a gate insulator; a channel that;
(i) is located in a body of the radio frequency switch; and
(ii) is insulated from the gate electrode by the gate insulator;a first doped region located across the channel from a second doped region; a third region that;
(i) spans the channel;
(ii) extends into the first and second doped regions; and
(iii) has a lower dopant concentration than the first and second doped regions;a first silicide region that forms a first Schottky diode junction with the third region; and a second silicide region that;
(i) is located across the channel from the first silicide region; and
(ii) forms a second Schottky diode with the third region;wherein the third region extends into the first doped region along a first portion of a width of the channel; wherein the third region extends into the second doped region along a second portion of the width of the channel; and wherein the first portion of the width is larger than the second portion of the width. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification