Semiconductor device

• US 9,177,969 B2
• Filed: 03/12/2015
• Issued: 11/03/2015
• Est. Priority Date: 01/30/2013
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kubota, Daisuke, Hatsumi, Ryo, Jintyou, Masami, Shigenobu, Takumi, Goto, Naoto
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US14/656,285
• Publication Number:
  US 20150187819A1
• Time in Patent Office: 236 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G02F 1/13306 Circuit arrangements or driving methods for the control of single liquid crystal cells G02F1/132, G02F1/133382 take precedence
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/13338 Input devices, e.g. touch panels
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/13415 Drop filling process
• CPC Class Codes: G02F 1/1343 Electrodes reflective electrodes G02F1/133553
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G06F 2203/04108 Touchless 2D- digitiser, i.e. digitiser detecting the X/Y position of the input means, finger or stylus, also when it does not touch, but is proximate to the digitiser's interaction surface without distance measurement in the Z direction
• CPC Class Codes: G06F 3/0412 Digitisers structurally integrated in a display
• CPC Class Codes: G06F 3/0446 using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 : with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/60 : Electrodes
• CPC Class Codes: H01L 29/24 : including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/41733 : for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/45 : Ohmic electrodes
• CPC Class Codes: H01L 29/78633 : with a light shield
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled.

Claims

1. A semiconductor device comprising:

a transistor comprising a semiconductor film over a substrate;

a pixel portion over the substrate;

a first light-transmitting conductive film over the substrate in the pixel portion;

a first insulating film over the semiconductor film and the first light-transmitting conductive film, the first insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;

a second insulating film over the first insulating film and the first light-transmitting conductive film;

a second light-transmitting conductive film over the second insulating film in the pixel portion; and

an alignment film over the second light-transmitting conductive film, the alignment film comprising a first alignment region, wherein the first alignment region and the opening overlap each other,

wherein in the first alignment region, an angle between a surface of the substrate and a surface of the first alignment region is less than or equal to 45°

, and

wherein the semiconductor film is light-transmitting.

13. An electronic appliance comprising the semiconductor device according to claim 1.

2. A semiconductor device comprising:

a first insulating film over a substrate;

a transistor over the substrate, the transistor comprising a semiconductor film, wherein the semiconductor film overlaps the first insulating film;

a pixel portion over the substrate;

a first light-transmitting conductive film over the first insulating film in the pixel portion;

a second insulating film over the semiconductor film and the first light-transmitting conductive film, the second insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;

a third insulating film over the second insulating film and the first light-transmitting conductive film;

a second light-transmitting conductive film over the third insulating film in the pixel portion; and

a planarization film over the second light-transmitting conductive film,

wherein the planarization film and the opening overlap each other, and

wherein each of the semiconductor film and the first light-transmitting conductive film is light-transmitting.

3. The semiconductor device according to claim 2, wherein the planarization film and the transistor overlap each other.

4. The semiconductor device according to claim 2, wherein the third insulating film is in contact with the first insulating film.

5. The semiconductor device according to claim 2,

wherein the transistor comprises a first electrode, a second electrode and a fourth insulating film over the semiconductor film,

wherein the fourth insulating film is interposed between the first electrode and the second electrode, and

wherein the second insulating film overlaps the fourth insulating film.

6. The semiconductor device according to claim 2, wherein the semiconductor film has a single-crystal structure.

7. The semiconductor device according to claim 2, wherein the semiconductor film comprises any one of a c-axis aligned crystalline oxide semiconductor, a polycrystalline oxide semiconductor, a microcrystalline oxide semiconductor, and an amorphous oxide semiconductor.

8. The semiconductor device according to claim 2, wherein each of the semiconductor film and the first light-transmitting conductive film comprises In, Zn and O.

9. The semiconductor device according to claim 2, wherein the second insulating film is capable of oxygen release.

10. The semiconductor device according to claim 2, wherein the third insulating film comprises hydrogen.

11. The semiconductor device according to claim 2, the planarization film comprises an organic resin.

12. A display comprising the semiconductor device according to claim 2.

14. A semiconductor device comprising:

a first insulating film over a substrate;

a transistor over the substrate, the transistor comprising a semiconductor film, wherein the semiconductor film overlaps the first insulating film;

a pixel portion over the substrate;

a first light-transmitting conductive film over the first insulating film in the pixel portion;

a second insulating film over the semiconductor film and the first light-transmitting conductive film, the second insulating film comprising an opening over the first light-transmitting conductive film in the pixel portion;

a third insulating film over the second insulating film and the first light-transmitting conductive film;

a second light-transmitting conductive film over the third insulating film in the pixel portion; and

a planarization film over the second light-transmitting conductive film, wherein the planarization film and the opening overlap each other,

wherein the semiconductor film and the first light-transmitting conductive film is light-transmitting,

wherein the first insulating film comprises a first gate insulating film and a second gate insulating film,

wherein the second gate insulating film is over the first gate insulating film, and

wherein the second gate insulating film is capable of oxygen release.

15. The semiconductor device according to claim 14,

wherein the semiconductor film comprises a first semiconductor film and a second semiconductor film,

wherein the second semiconductor film over the first semiconductor film, and

wherein the first semiconductor film and the second semiconductor film comprises a first metal element.

16. The semiconductor device according to claim 15,

wherein the transistor comprises a first electrode and a second electrode,

wherein the first semiconductor film is interposed between the first electrode and the second electrode, and

wherein the second semiconductor film over the first electrode and the second electrode.

17. The semiconductor device according to claim 16, wherein each of the first semiconductor film and the second semiconductor film is interposed between two gate electrodes.

18. The semiconductor device according to claim 14, wherein the semiconductor film has a single-crystal structure.

19. The semiconductor device according to claim 14, wherein the semiconductor film comprises any one of a c-axis aligned crystalline oxide semiconductor, a polycrystalline oxide semiconductor, a microcrystalline oxide semiconductor, and an amorphous oxide semiconductor.

20. A display comprising the semiconductor device according to claim 14.

21. An electronic appliance comprising the semiconductor device according to claim 14.