High breakdown voltage metal-insulator-metal capacitor

• US 9,178,007 B1
• Filed: 07/17/2014
• Issued: 11/03/2015
• Est. Priority Date: 04/30/2014
• Status: Active Grant

• Current Assignee: Win Semiconductors Corporation
• Original Assignee: Win Semiconductors Corporation
• Inventors: Hua, Chang-Hwang, Shao, Winson, Chu, Wen, Hsu, Ben
• Primary Examiner(s): Schoenholtz, Joseph
• Application Number:
  US14/333,814
• Publication Number:
  US 20150318342A1
• Time in Patent Office: 474 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

A high breakdown voltage metal-insulator-metal capacitor for compound semiconductor integrated circuit comprises a substrate, an isolation layer, a first metal layer, a dielectric layer, an adhesion layer and a second metal layer. The dielectric layer is formed by alternately stacking plural HfO₂ layers and plural SiO₂ layers. The thickness of each layer of the plural HfO₂ layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of the plural HfO₂ layers. And the total thickness of the dielectric layer is thicker than 500 Å such that the breakdown voltage of the capacitor is higher than 50 V.

Claims

1. A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:

a substrate;

an isolation layer formed on said substrate;

a first metal layer formed on said isolation layer;

a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural HfO₂ layers and plural SiO₂ layers;

an adhesion layer formed on said dielectric layer; and

a second metal layer formed on said adhesion layer;

wherein the thickness of each layer of said plural HfO₂ layers is between 30 Å

to 100 Å

so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural HfO₂ layers; and

wherein the total thickness of said dielectric layer is thicker than 500 Å

such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.

2. The high breakdown voltage MIM capacitor according to claim 1, wherein the total thickness of said dielectric layer is between 500 Å

to 1000 Å

.

3. The high breakdown voltage MIM capacitor according to claim 1, wherein the thickness of each layer of said plural SiO₂ layers is between 5 Å

to 50 Å

.

4. The high breakdown voltage MIM capacitor according to claim 1, wherein the total thickness of said plural HfO₂ layers is between 450 Å

to 800 Å

.

5. The high breakdown voltage MIM capacitor according to claim 1, wherein the total thickness of said plural SiO₂ layers is between 50 Å

to 200 Å

.

6. The high breakdown voltage MIM capacitor according to claim 1, wherein the ratio of the total thickness of said plural SiO₂ layers to the total thickness of said dielectric layer is between 5% to 25%.

7. A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:

a substrate;

an isolation layer formed on said substrate;

a first metal layer formed on said isolation layer;

a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural HfO₂ layers and plural alternate layers;

an adhesion layer formed on said dielectric layer; and

a second metal layer formed on said adhesion layer;

wherein each of said plural alternate layers is a SiO₂ layer or an Al₂O₃ layer; and

said plural alternate layers include at least one said SiO₂ layer and at least one said Al₂O₃ layer;

wherein the thickness of each layer of said plural HfO₂ layers is between 30 Å

to 100 Å

so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural HfO₂ layers; and

wherein the total thickness of said dielectric layer is thicker than 500 Å

such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.

8. The high breakdown voltage MIM capacitor according to claim 7, wherein the total thickness of said dielectric layer is between 500 Å

to 1000 Å

.

9. The high breakdown voltage MIM capacitor according to claim 7, wherein the thickness of each layer of said plural alternate layers is between 5 Å

to 100 Å

.

10. The high breakdown voltage MIM capacitor according to claim 7, wherein the total thickness of said plural HfO₂ layers is between 450 Å

to 800 Å

.

11. The high breakdown voltage MIM capacitor according to claim 7, wherein the total thickness of said plural alternate layers is between 50 Å

to 300 Å

.

12. The high breakdown voltage MIM capacitor according to claim 7, wherein the ratio of the total thickness of said plural alternate layers to the total thickness of said dielectric layer is between 5% to 35%.

13. A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:

a substrate;

an isolation layer formed on said substrate;

a first metal layer formed on said isolation layer;

a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural ZrO₂ layers and plural alternate layers;

an adhesion layer formed on said dielectric layer; and

a second metal layer formed on said adhesion layer;

wherein each of said plural alternate layers is a SiO₂ layer or an Al₂O₃ layer; and

said plural alternate layers include at least one said SiO₂ layer;

wherein the thickness of each layer of said plural ZrO₂ layers is between 30 Å

to 100 Å

so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural ZrO₂ layers; and

wherein the total thickness of said dielectric layer is thicker than 500 Å

such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.

14. The high breakdown voltage MIM capacitor according to claim 13, wherein the total thickness of said dielectric layer is between 500 Å

to 1000 Å

.

15. The high breakdown voltage MIM capacitor according to claim 13, wherein the thickness of each layer of said plural alternate layers is between 5 Å

to 100 Å

.

16. The high breakdown voltage MIM capacitor according to claim 13, wherein the total thickness of said plural ZrO₂ layers is between 450 Å

to 800 Å

.

17. The high breakdown voltage MIM capacitor according to claim 13, wherein the total thickness of said plural alternate layers is between 50 Å

to 300 Å

.

18. The high breakdown voltage MIM capacitor according to claim 13, wherein the ratio of the total thickness of said plural alternate layers to the total thickness of said dielectric layer is between 5% to 35%.