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Plated trench capacitor structures

  • US 9,178,012 B2
  • Filed: 02/07/2014
  • Issued: 11/03/2015
  • Est. Priority Date: 10/10/2011
  • Status: Expired due to Fees
First Claim
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1. A structure, comprising:

  • a semiconductor substrate;

    a trench in the semiconductor substrate and in alignment with an opening in a plurality of upper layers covering the semiconductor substrate;

    a conformal metal plate lining exposed surfaces of the trench;

    a dielectric liner on the conformal metal plate;

    a metal inner electrode on the dielectric liner;

    a contact in contact with the metal inner electrode; and

    an oxide cap within the opening and on any exposed top surfaces of the conformal metal plate, the dielectric liner, and the metal inner electrode,wherein the contact extends through the oxide cap and into contact with at least a portion of the metal inner electrode.

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