Semiconductor device and semiconductor device production system

• US 9,178,069 B2
• Filed: 07/31/2009
• Issued: 11/03/2015
• Est. Priority Date: 01/17/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo, Yamazaki, Shunpei, Dairiki, Koji, Shibata, Hiroshi, Kokubo, Chiho, Arao, Tatsuya, Hayakawa, Masahiko, Miyairi, Hidekazu, Shimomura, Akihisa, Tanaka, Koichiro, Akiba, Mai
• Primary Examiner(s): SONG, MATTHEW J
• Application Number:
  US12/533,401
• Publication Number:
  US 20100029068A1
• Time in Patent Office: 2,286 Days
• Field of Search: 117/3, 117/4, 117/84, 117/88, 117/90, 117/97, 438/149, 438/154, 438/197, 438/378
• US Class Current: 1/1
• CPC Class Codes: B23K 26/0738 into a linear shape
• CPC Class Codes: H01L 21/02354 using a coherent radiation, e.g. a laser
• CPC Class Codes: H01L 21/02356 treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02425 Conductive materials, e.g. metallic silicides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 : with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 : integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1274 : using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
• CPC Class Codes: H01L 27/1281 : by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1296 : adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/66757 : Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78675 : with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 : characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: Y10S 118/90 : Semiconductor vapor doping
• CPC Class Codes: Y10T 117/10 : Apparatus
• CPC Class Codes: Y10T 117/1004 : with means for measuring, testing, or sensing
• CPC Class Codes: Y10T 117/1008 : with responsive control means

Abstract

A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming an insulating film over an insulating substrate;

selectively etching the insulating film to form a plurality of projection portions, wherein each of the plurality of projection portions has a rectangular or stripe pattern;

forming a semiconductor film so as to cover the plurality of projection portions;

irradiating the semiconductor film with a laser light; and

removing a portion of the semiconductor film so that a plurality of semiconductor islands is formed between each of the plurality of projection portions after the irradiating step.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the irradiating step is conducted according to a defined scanning route in advance.

3. A method for manufacturing a semiconductor device according to claim 1, wherein the laser light is a continuous wave laser light.

4. A method for manufacturing a semiconductor device according to claim 1, wherein the laser light is a second harmonic.

5. A method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a display apparatus, a camera, a computer, a goggle type display, and a phone.

6. A method for manufacturing a semiconductor device comprising:

forming a first insulating film over an insulating substrate;

forming a second insulating film over the first insulating film;

selectively etching the second insulating film to form a plurality of projection portions, wherein each of the plurality of projection portions has a rectangular or stripe pattern;

forming a semiconductor film so as to cover the plurality of projection portions;

irradiating the semiconductor film with a laser light; and

removing a portion of the semiconductor film so that a plurality of semiconductor islands is formed between each of the plurality of projection portions after the irradiating step.

7. A method for manufacturing a semiconductor device according to claim 6, wherein the irradiating step is conducted according to a defined scanning route in advance.

8. A method for manufacturing a semiconductor device according to claim 6, wherein the first insulating film comprises silicon oxide nitride, and the second insulating film comprises silicon oxide.

9. A method for manufacturing a semiconductor device according to claim 6, wherein the laser light is a continuous wave laser light.

10. A method for manufacturing a semiconductor device according to claim 6, wherein the laser light is a second harmonic.

11. A method for manufacturing a semiconductor device according to claim 6, wherein the semiconductor device is one selected from the group consisting of a display apparatus, a camera, a computer, a goggle type display, and a phone.