Thin-film semiconductor device and method for manufacturing the same
First Claim
1. A thin-film semiconductor device comprising:
- a gate electrode above a substrate;
a gate insulating film which covers the gate electrode;
a semiconductor layer above the gate insulating film, the semiconductor layer having a channel region;
a protective layer above the semiconductor layer, the protective layer containing an organic material which includes silicon, oxygen, and carbon;
an interfacial layer in contact with the protective layer between the semiconductor layer and the protective layer, the interfacial layer including carbon as a major component, the carbon originating from the organic material; and
a source electrode and a drain electrode which are electrically connected to the semiconductor layer,wherein the interfacial layer includes sulfur.
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Accused Products
Abstract
A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.
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Citations
18 Claims
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1. A thin-film semiconductor device comprising:
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a gate electrode above a substrate; a gate insulating film which covers the gate electrode; a semiconductor layer above the gate insulating film, the semiconductor layer having a channel region; a protective layer above the semiconductor layer, the protective layer containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer in contact with the protective layer between the semiconductor layer and the protective layer, the interfacial layer including carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer, wherein the interfacial layer includes sulfur. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a thin-film semiconductor device, the method comprising:
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preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film to cover the gate electrode; forming a semiconductor layer above the gate insulating film, the semiconductor layer having a channel region; forming a protective layer above the semiconductor layer by applying an organic material including silicon, oxygen, and carbon; forming, by baking the protective layer, an interfacial layer, in contact with the protective layer, between the semiconductor layer and the protective layer, the interfacial layer including carbon as a major component, the carbon originating from the organic material; and forming a source electrode and a drain electrode which are electrically connected to the semiconductor layer, wherein the interface layer includes sulfur. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a thin-film semiconductor device, the method comprising:
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preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film to cover the gate electrode; forming a crystalline silicon thin film above the gate insulating film, the crystalline silicon thin film having a channel region; foaming a protective layer above the channel region by applying an organic material including carbon; and forming a source electrode and a drain electrode above the crystalline silicon thin film, wherein an organic material contained in the protective layer is removed with hydrogen plasma treatment, and the method further comprises, between the forming of a crystalline silicon thin film and the forming of a protective layer, performing of a hydrogenation process on the crystalline silicon thin film with hydrogen plasma.
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Specification