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Thin-film semiconductor device and method for manufacturing the same

  • US 9,178,075 B2
  • Filed: 02/27/2012
  • Issued: 11/03/2015
  • Est. Priority Date: 02/28/2011
  • Status: Expired due to Fees
First Claim
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1. A thin-film semiconductor device comprising:

  • a gate electrode above a substrate;

    a gate insulating film which covers the gate electrode;

    a semiconductor layer above the gate insulating film, the semiconductor layer having a channel region;

    a protective layer above the semiconductor layer, the protective layer containing an organic material which includes silicon, oxygen, and carbon;

    an interfacial layer in contact with the protective layer between the semiconductor layer and the protective layer, the interfacial layer including carbon as a major component, the carbon originating from the organic material; and

    a source electrode and a drain electrode which are electrically connected to the semiconductor layer,wherein the interfacial layer includes sulfur.

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