Single photon avalanche diode for CMOS circuits

• US 9,178,100 B2
• Filed: 09/08/2011
• Issued: 11/03/2015
• Est. Priority Date: 09/08/2010
• Status: Active Grant

• Current Assignee: STMicroelectronics Limited (STMicroelectronics NV), University of Edinburgh
• Original Assignee: STMicroelectronics Limited (STMicroelectronics NV), University of Edinburgh
• Inventors: Henderson, Robert Kerr, Webster, Eric Alexander Garner
• Primary Examiner(s): Reames, Matthew
• Assistant Examiner(s): Wall, Vincent
• Application Number:
  US13/821,524
• Publication Number:
  US 20130193546A1
• Time in Patent Office: 1,517 Days
• Field of Search: 257/438, 438/92
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A single photon avalanche diode for use in a CMOS integrated circuit includes a deep n-well region formed above a p-type substrate and an n-well region formed above and in contact with the deep n-well region. A cathode contact is connected to the n-well region via a heavily doped n-type implant. A lightly doped region forms a guard ring around the n-well and deep n-well regions. A p-well region is adjacent to the lightly doped region. An anode contact is connected to the p-well region via a heavily doped p-type implant. The junction between the bottom of the deep n-well region and the substrate forms a multiplication region when an appropriate bias voltage is applied between the anode and cathode and the guard ring breakdown voltage is controlled with appropriate control of the lateral doping concentration gradient such that the breakdown voltage is higher than that of the multiplication region.

Claims

1. A single photon avalanche diode SPAD, the SPAD comprising:

a SPAD multiplication junction;

a first region comprising a first well of a first conductivity type;

a second region comprising a second well of the first conductivity type formed below and in contact with the first well, the second well having a retrograde doping concentration which increases with depth from the first well toward a bottom of the second well;

a third region of a second conductivity type, the first and second regions formed within and above the third region, wherein the third region is in contact with sides of the second well and further in contact with the bottom of the second well to provide said SPAD multiplication junction;

a first contact connected to the first region; and

a second contact connected to the third region via a conductive pathway of the second conductivity type;

wherein the third region has a retrograde doping concentration which increases with depth towards the SPAD multiplication junction such that breakdown voltage is smaller at the SPAD multiplication junction at the bottom of the second region than at the sides of the second region.

2. A SPAD according to claim 1, wherein the first and second contacts are arranged on a same surface of a semiconductor substrate.

3. A SPAD according to claim 1, wherein the third region is formed by a semiconductor substrate or an epi-layer of the second conductivity type.

7. A SPAD according to claim 1, further comprising a guard ring formed by the substrate region at said sides of the second region.

8. A SPAD according to claim 1, further comprising a guard ring formed by a portion of the third region having the retrograde doping concentration.

10. A SPAD according to claim 1, wherein a depth of the SPAD multiplication junction is below a bottom of the conductive pathway.

11. A SPAD according to claim 1, wherein the SPAD multiplication junction extends substantially parallel to an upper surface of the first region.

12. A SPAD according to claim 1, further comprising an inner well of the second conductivity type formed within the first region and laterally isolated from the first region by a guard ring surrounding the inner well.

13. A SPAD according to claim 1, wherein the depth of the SPAD multiplication junction is 2 μ

m.

4. A single photon avalanche diode SPAD, the SPAD comprising:

a SPAD multiplication junction;

a first region of a first conductivity type arranged on or in a second region comprising an epi-layer or substrate of a second conductivity type;

wherein a bottom of said first region is in contact with the second region to define said SPAD multiplication junction;

wherein the first region comprises a first well having a first depth and a second well below the first well having a second depth extending to said bottom and the location of the SPAD multiplication junction;

a guard ring surrounding and in contact with the first region and formed by a region of the substrate or epi-layer of the second conductivity type;

a first contact connected to the first region via a conductive pathway of the first conductivity type formed in the first region; and

a second contact connected to the second region via a conductive pathway of the second conductivity type formed in the epi-layer or substrate;

wherein the conductive pathway of the second conductivity type comprises a third well having a third depth less than the second depth of the SPAD multiplication junction; and

wherein the guard ring has a retrograde doping concentration which increases with depth towards the SPAD multiplication junction so that breakdown voltage is smaller at the SPAD multiplication junction between the bottom of the first region and the second region than at sides of the first region in contact with the guard ring.

5. A SPAD according to claim 4, wherein the SPAD is formed substantially within the epi-layer.

6. A SPAD according to claim 4, wherein the first region has a retrograde doping gradient which increases with depth towards the SPAD multiplication junction.

9. A SPAD according to claim 4, wherein a doping concentration of the second well increases with depth.

14. A SPAD according to claim 4, wherein a depth of the SPAD multiplication junction is 2 μ

m.

15. A single photon avalanche diode SPAD, the SPAD comprising:

a first region comprising a first well of a first conductivity type;

a second region comprising a second well of the first conductivity type formed below the first well;

a third region of a second conductivity type, the first and second regions formed within and above the third region;

an enhancement implant of the second conductivity type formed within the third region below the second well and in contact with a bottom of the second well at a SPAD multiplication junction;

a first contact connected to the first region; and

a second contact connected to the third region via a conductive pathway of the second conductivity type;

wherein the doping in the vicinity of the second region is controlled such that the breakdown voltage is smaller at the SPAD multiplication junction than at sides of the second region, and

wherein SPAD multiplication occurs at the SPAD multiplication junction when an appropriate bias voltage is applied between the first and second contacts.

16. The SPAD of claim 15, wherein the third region has a retrograde doping concentration which increases with depth towards the SPAD multiplication junction.

17. The SPAD of claim 16, further comprising a guard ring formed by a portion of the third region having the retrograde doping concentration.

18. The SPAD of claim 15, wherein the second well has a retrograde doping concentration which increases with depth from the first well toward the bottom of the second well.

19. The SPAD of claim 15, wherein the first and second contacts are arranged on a same surface of a semiconductor substrate.

20. The SPAD of claim 15, wherein the third region is formed by a semiconductor substrate or an epi-layer.

21. The SPAD of claim 20, wherein the SPAD is formed substantially within the epi-layer.

22. The SPAD of claim 15, further comprising a guard ring formed by the third region at said sides of the second region.

23. The SPAD of claim 15, wherein a depth of the SPAD multiplication junction is greater than a deepest part of the conductive pathway.

24. The SPAD of claim 15, wherein the SPAD multiplication junction is substantially parallel to a surface of a semiconductor substrate within which the SPAD is integrated.

25. The SPAD of claim 15, wherein the depth of the SPAD multiplication junction is 2 μ

m.

26. A single photon avalanche diode SPAD, the SPAD comprising:

a SPAD multiplication junction;

a first well of a first conductivity type;

a substrate region of a second conductivity type, the first well located within the substrate region, wherein the substrate region is in contact with a bottom of the first well to provide said SPAD multiplication junction;

a guard ring surrounding an upper portion of the first well, wherein a depth of the bottom of the second well at the SPAD multiplication junction is lower than a lowest part of the guard ring and wherein the guard ring is formed by a region of the first conductivity type which is more lightly doped that the first well;

a first contact connected to the first region; and

a second contact connected to the third region via a conductive pathway of the second conductivity type.

27. The SPAD of claim 26, wherein the guard ring is formed by a region of the second conductivity type which more lightly doped than the substrate region.

28. The SPAD of claim 26, wherein the guard ring is formed by a region of insulating material.

29. The SPAD of claim 26, wherein the first well has a retrograde doping concentration which increases with depth toward the bottom of the first well at the SPAD multiplication junction.

30. The SPAD of claim 26, wherein the depth of the bottom of the second well at the SPAD multiplication junction is below a bottom of the conductive pathway.

31. The SPAD of claim 26, wherein the depth of the bottom of the second well at the SPAD multiplication junction is 2 μ

m.

32. The SPAD of claim 26, wherein the substrate region is formed by a semiconductor substrate or an epi-layer.