Dual plasma volume processing apparatus for neutral/ion flux control
First Claim
1. A semiconductor wafer processing apparatus, comprising:
- a first electrode exposed to a first plasma generation volume, the first electrode defined to transmit radiofrequency (RF) power to the first plasma generation volume, the first electrode further defined to distribute a first plasma process gas to the first plasma generation volume;
a second electrode exposed to a second plasma generation volume, the second electrode defined to transmit RF power to the second plasma generation volume, the second electrode further defined to hold a substrate in exposure to the second plasma generation volume;
a gas distribution unit disposed between the first plasma generation volume and the second plasma generation volume, the gas distribution unit defined to include an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the first plasma generation volume to the second plasma generation volume, the gas distribution unit further defined to include interior gas supply channels fluidly connected to an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume, wherein the gas distribution unit includes embedded electrodes defined around the through-holes and around portions of the gas supply ports and below horizontal portions of the interior gas supply channels, each of the embedded electrodes defined to connect with any one of one or more direct current bias sources external to the gas distribution unit; and
an exhaust channel configured to circumscribe the first plasma generation volume outside of a radial periphery of the first electrode and outside of a radial periphery of the gas distribution unit.
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Accused Products
Abstract
A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
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Citations
32 Claims
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1. A semiconductor wafer processing apparatus, comprising:
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a first electrode exposed to a first plasma generation volume, the first electrode defined to transmit radiofrequency (RF) power to the first plasma generation volume, the first electrode further defined to distribute a first plasma process gas to the first plasma generation volume; a second electrode exposed to a second plasma generation volume, the second electrode defined to transmit RF power to the second plasma generation volume, the second electrode further defined to hold a substrate in exposure to the second plasma generation volume; a gas distribution unit disposed between the first plasma generation volume and the second plasma generation volume, the gas distribution unit defined to include an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the first plasma generation volume to the second plasma generation volume, the gas distribution unit further defined to include interior gas supply channels fluidly connected to an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume, wherein the gas distribution unit includes embedded electrodes defined around the through-holes and around portions of the gas supply ports and below horizontal portions of the interior gas supply channels, each of the embedded electrodes defined to connect with any one of one or more direct current bias sources external to the gas distribution unit; and an exhaust channel configured to circumscribe the first plasma generation volume outside of a radial periphery of the first electrode and outside of a radial periphery of the gas distribution unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A system for semiconductor wafer processing, comprising:
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a chamber defined to have an interior cavity and an exhaust port that provides for fluid connection of the interior cavity to an exhaust pump; a dual plasma processing apparatus disposed within the interior cavity of the chamber and including, an upper plasma chamber including an upper plasma generation volume, a showerhead electrode defined above the upper plasma generation volume to supply a first plasma process gas and radiofrequency (RF) power to the upper plasma generation volume, a lower plasma chamber including a lower plasma generation volume, a gas distribution unit disposed between the upper and lower plasma generation volumes, the gas distribution unit defined to supply a second plasma process gas to the lower plasma generation volume, the gas distribution unit including an arrangement of through-holes formed to extend from an upper surface of the gas distribution unit facing the upper plasma generation volume to a lower surface of the gas distribution unit facing the lower plasma generation volume to provide controlled fluid communication between the upper and lower plasma generation volumes, wherein the gas distribution unit includes interior gas supply channels fluidly connected to an arrangement of gas supply ports defined on the lower surface of the gas distribution unit to distribute a plasma process gas to the lower plasma generation volume, wherein the gas distribution unit includes embedded electrodes defined around the through-holes and around portions of the gas supply ports and below horizontal portions of the interior gas supply channels, each of the embedded electrodes defined to connect with any one of one or more direct current bias sources external to the gas distribution unit, and an exhaust channel configured to circumscribe the upper plasma generation volume outside of a radial periphery of the showerhead electrode and outside of a radial periphery of the gas distribution unit; and a chuck disposed within the interior cavity of the chamber below the lower plasma generation volume, the chuck defined to hold a substrate in exposure to the lower plasma generation volume, the chuck further defined to supply RF power to the lower plasma generation volume. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. A gas distribution unit, comprising:
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a plate formed to separate an upper plasma generation volume from a lower plasma generation volume, the plate having an upper surface and a lower surface, wherein the plate includes an arrangement of through-holes that each extend through the plate from the upper surface of the plate to the lower surface of the plate so as to fluidly connect the upper plasma generation volume to the lower plasma generation volume, and wherein the plate includes interior gas supply channels fluidly connected to an arrangement of gas supply ports defined on the lower surface of the plate to distribute a plasma process gas to the lower plasma generation volume; and electrodes embedded within the plate, the electrodes defined around the through-holes and around portions of the gas supply ports and below horizontal portions of the interior gas supply channels, each of the electrodes defined to connect with any one of one or more direct current bias sources external to the plate. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification