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Simplified pitch doubling process flow

  • US 9,184,159 B2
  • Filed: 12/21/2012
  • Issued: 11/10/2015
  • Est. Priority Date: 04/07/2006
  • Status: Active Grant
First Claim
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1. A partially formed integrated circuit, comprising:

  • a substrate;

    a plurality of mandrels overlying the substrate, each mandrel having a long dimension and a short dimension as seen in a top-down view;

    a plurality of spacer loops disposed at sidewalls of the mandrels;

    a hard mask layer disposed on a same level as the spacer loops; and

    a mask disposed directly over the hard mask layer and ends of the spacer loops disposed at sidewalls of the mandrels, while leaving mid-sections of the spacer loops exposed, wherein the mid-sections are disposed between opposing ends of each spacer loop, and wherein each mid-section comprises a spacer portion immediately adjacent a midpoint of the long dimension of the mandrels.

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